1. ⁶³Cu and ¹¹⁵In NMR study of CuInS₂ semiconductor

   • I. Kh. Khabibullin
   • V. L. Matukhin
   • E. V. Schmidt

   Atomic Structure and Nonelectronic Properties of Semiconductors 08 January 2009 Pages: 1 - 3

2. The effect of amorphization on the local structure of arsenic chalcogenides

   • G. A. Bordovsky
   • A. V. Marchenko
   • E. I. Terukov

   Atomic Structure and Nonelectronic Properties of Semiconductors 08 January 2009 Pages: 4 - 6

3. Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity

   • V. A. Romaka
   • D. Fruchart
   • L. G. Akselrud

   Electronic and Optical Properties of Semiconductors 08 January 2009 Pages: 7 - 13

4. Apparent low-frequency charge capacitance of semiconducting boron

   • O. A. Tsagareishvili
   • L. S. Chkhartishvili
   • D. L. Gabunia

   Electronic and Optical Properties of Semiconductors 08 January 2009 Pages: 14 - 20

5. Structural and luminescent properties of ZnO:P films produced by annealing ZnP₂ wafers in atomic oxygen

   • I. V. Rogozin

   Electronic and Optical Properties of Semiconductors 08 January 2009 Pages: 21 - 25

6. IR luminescence in thermally treated silicon

   • V. V. Bolotov
   • V. E. Kang

   Electronic and Optical Properties of Semiconductors 08 January 2009 Pages: 26 - 28

7. Photosensitivity of the Ni-n-GaAs Schottky barriers

   • D. Melebaev
   • G. D. Melebaeva
   • Yu. V. Rud’

   Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 29 - 32

8. Determination of the fractal dimension for the epitaxial n-GaAs surface in the local limit

   • N. A. Torkhov
   • V. G. Bozhkova
   • V. A. Novikov

   Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 33 - 41

9. Transmission of hot electrons through a metal-semiconductor interface

   • F. V. Kharlamov
   • V. F. Kharlamov

   Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 42 - 46

10. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    • S. H. Shamirzaev
    • G. Gulyamov
    • A. G. Gulyamov

    Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 47 - 51

11. Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer

    • I. E. Tyschenko
    • M. Voelskow
    • V. P. Popov

    Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 52 - 56

12. Radiative recombination in the CdMgTe matrix with ultrathin narrow-gap CdMnTe layers

    • V. F. Agekyan
    • A. Yu. Serov
    • G. Karczewski

    Semiconductor Structures, Interfaces, and Surfaces 08 January 2009 Pages: 57 - 62

13. Influence of segregation effects on the electroluminescence spectra of InGaAs/GaAs quantum well heterostructures grown by H-MOVPE

    • R. Kh. Akchurin
    • A. Yu. Andreev
    • A. V. Sukharev

    Low-Dimensional Systems 08 January 2009 Pages: 63 - 68

14. Hysteresis of giant intensity fluctuations of emission for two-dimensional electrons in the conditions for the integer quantum Hall effect

    • A. L. Parakhonsky
    • M. V. Lebedev
    • I. V. Kukushkin

    Low-Dimensional Systems 08 January 2009 Pages: 69 - 74

15. Quantum Hall effect in (cadmium flouride)-based nanostructures

    • N. T. Bagraev
    • O. N. Gimbitskaya
    • A. S. Shcheulin

    Low-Dimensional Systems 08 January 2009 Pages: 75 - 77

16. Spin transistor based on cadmium fluoride nanostructures

    • N. T. Bagraev
    • O. N. Gimbitskaya
    • A. S. Shcheulin

    Low-Dimensional Systems 08 January 2009 Pages: 78 - 87

17. The effect of silicon crystallographic orientation on the formation of silicon nanoclusters during anodic electrochemical etching

    • D. F. Timokhov
    • F. P. Timokhov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 08 January 2009 Pages: 88 - 91

18. Effect of halogens on the formation and properties of the porous silicon layers

    • V. V. Bolotov
    • Yu. A. Sten’kin
    • I. V. Ponomareva

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 08 January 2009 Pages: 92 - 95

19. Microstructure and optical properties of In₂S₃ films produced by thermal evaporation

    • O. V. Goncharova
    • V. F. Gremenok

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 08 January 2009 Pages: 96 - 101

20. Conductivity of the opal-VO₂ composite at the semiconductor-metal phase transition

    • E. B. Shadrin
    • D. A. Kurdyukov
    • V. G. Golubev

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 08 January 2009 Pages: 102 - 104

21. Transverse spatial transport in field-effect transistors based on heterostructures with selective doping and the limits of applicability of quasi-hydrodynamic models

    • A. V. Klimova
    • M. V. Lukashin
    • A. B. Pashkovskii

    Physics of Semiconductor Devices 08 January 2009 Pages: 105 - 111

22. Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures

    • S. O. Slipchenko
    • A. D. Bondarev
    • I. S. Tarasov

    Physics of Semiconductor Devices 08 January 2009 Pages: 112 - 116

23. Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures

    • N. S. Averkiev
    • A. P. Astakhova
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 08 January 2009 Pages: 117 - 120

24. Numerical simulation of the process of hydrogenation of GaAs

    • V. A. Kagadei
    • E. V. Nefyodtsev

    Fabrication, Treatment, and Testing of Materials and Structures 08 January 2009 Pages: 121 - 129

25. Vitalii Ivanovich Stafeev (on his 80th birtday)

    Personalia 08 January 2009 Pages: 130 - 130