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Numerical simulation of the process of hydrogenation of GaAs

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Abstract

The evolution of concentration profiles for all types of hydrogen particles, charge carriers, and active dopants in the surface region of p-GaAs during hydrogenation is simulated. The numerical experiment is conducted on the basis of the least-simplified comprehensive mathematical model. The regular trends in accumulation and transport of hydrogen particles and the role of the electric field in these processes are discussed. The numerical and analytical calculations serve to validate the small efficiency of formation for hydrogen-dopant complexes at typical temperatures of hydrogenation for GaAs (T > 150°C).

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Authors and Affiliations

  1. High Current Electronics Institute, Siberian Branch, Russian Academy of Sciences, Tomsk, 634055, Russia

    V. A. Kagadei & E. V. Nefyodtsev

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  1. V. A. Kagadei
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  2. E. V. Nefyodtsev
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Correspondence to E. V. Nefyodtsev.

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Original Russian Text © V.A. Kagadei, E.V. Nefyodtsev, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 1, pp. 128–135.

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Kagadei, V.A., Nefyodtsev, E.V. Numerical simulation of the process of hydrogenation of GaAs. Semiconductors 43, 121–129 (2009). https://doi.org/10.1134/S1063782609010242

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  • DOI: https://doi.org/10.1134/S1063782609010242

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