1. Quasi-reflectionless potentials in semiconductor nanoheterostructures

   • A. A. Gorbatsevich
   • M. N. Zhuravlev
   • V. V. Kapaev

   Basic Research 17 December 2008 Pages: 1455 - 1461

2. A study of the transport of charge carriers in coupled quantum regions

   • B. G. Konoplev
   • E. A. Ryndin

   Basic Research 17 December 2008 Pages: 1462 - 1468

3. Inclusions of carbon in ingots of silicon carbide grown by the modified Lely method

   • D. D. Avrov
   • S. I. Dorozhkin
   • A. O. Lebedev

   Materials for Electronic Engineering 17 December 2008 Pages: 1469 - 1474

4. New technologies for production of polycrystalline silicon for solar power engineering

   • B. G. Gribov
   • K. V. Zinov’ev

   Materials for Electronic Engineering 17 December 2008 Pages: 1475 - 1479

5. Photoluminescence of Si-doped GaAs epitaxial layers

   • N. G. Yaremenko
   • M. V. Karachevtseva
   • V. G. Mokerov

   Materials for Electronic Engineering 17 December 2008 Pages: 1480 - 1486

6. Phenomenological description of dispersion of 8-60-nm-thick silicon thin films into drops on Al₂O₃ inert surface

   • A. A. Buzdugan
   • S. A. Gavrilov
   • I. S. Chulkov

   Materials for Electronic Engineering 17 December 2008 Pages: 1487 - 1491

7. Study of properties of nanoscale lead zirconate titanate films

   • V. M. Roshchin
   • V. B. Yakovlev
   • M. S. Lovyagina

   Materials for Electronic Engineering 17 December 2008 Pages: 1492 - 1495

8. Carbon nanomaterial studied by atomic-force and electron microscopies

   • I. I. Bobrinetskĭ
   • V. N. Kukin
   • M. M. Simunin

   Materials for Electronic Engineering 17 December 2008 Pages: 1496 - 1498

9. Effect of Te on the self-activated emission of ZnSe

   • N. K. Morozova
   • D. A. Mideros

   Materials for Electronic Engineering 17 December 2008 Pages: 1499 - 1502

10. Charge state distribution in the a-Si:H mobility gap

    • A. A. Sherchenkov
    • A. B. Apal’kov

    Materials for Electronic Engineering 17 December 2008 Pages: 1503 - 1507

11. Study of model of self-coordinated growth of single crystals of sapphire by horizontal directed crystallization

    • S. P. Malyukov
    • B. A. Stefanovich
    • D. I. Cherednichenko

    Materials for Electronic Engineering 17 December 2008 Pages: 1508 - 1511

12. Effect of treatment technology for the surface of multicomponent oxide compounds with sillenite structure on the electron-transition kinetics in surface areas

    • A. N. Chaplygin
    • E. A. Spirin
    • A. S. Sizov

    Materials for Electronic Engineering 17 December 2008 Pages: 1512 - 1514

13. Charge state of luminescence centers in the Si-SiO₂ structures subjected to sequential implantation with silicon and carbon ions

    • A. P. Baraban
    • Yu. V. Petrov

    Microelectronics Technology 17 December 2008 Pages: 1515 - 1518

14. Local etching of silicon using a solid mask from porous aluminum oxide

    • A. N. Belov

    Microelectronics Technology 17 December 2008 Pages: 1519 - 1521

15. Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors

    • Yu. A. Chaplygin
    • E. A. Artamonova
    • T. Yu. Krupkina

    Microelectronic Devices and Systems 17 December 2008 Pages: 1522 - 1526

16. Simulation and optimization of the CMOS structure with vertically integrated single-contact photodetectors with separation of colors in the visible spectral region

    • E. B. Volodin
    • E. A. Ignat’eva
    • V. V. Uzdovskii

    Microelectronic Devices and Systems 17 December 2008 Pages: 1527 - 1531

17. Determination of the charge transport mechanism in p-n junctions by analyzing temperature dependences of forward current-voltage characteristics

    • N. S. Grushko
    • A. V. Lakalin
    • A. I. Somov

    Microelectronic Devices and Systems 17 December 2008 Pages: 1532 - 1535

18. Magnetically controlled two-terminal device with negative differential resistance and N-type current-voltage characteristic

    • Yu. A. Chaplygin
    • A. I. Galushkov
    • D. A. Usanov

    Microelectronic Devices and Systems 17 December 2008 Pages: 1536 - 1540

19. Intrinsic noise variation in an amplifier based on a heterojunction bipolar transistor amplifier in nonlinear mode

    • A. M. Bobreshov
    • L. I. Averina
    • D. A. Makarenko

    Microelectronic Devices and Systems 17 December 2008 Pages: 1541 - 1544

20. NRZ-to-NRZM code converter based on gallium-arsenide heterojunction bipolar transistors

    • V. P. Timoshenkov
    • V. A. Bratov

    Microelectronic Devices and Systems 17 December 2008 Pages: 1545 - 1551

21. Texturing problems in nanotechnology: Texture control

    • S. K. Maksimov
    • K. S. Maksimov

    Nanotechnology 17 December 2008 Pages: 1552 - 1556

22. Analysis of the effect of material anisotropic properties on the eigenfrequency of ring cavities of micromechanical gyroscopes

    • S. A. Zotov

    Microsystems 17 December 2008 Pages: 1557 - 1560

23. MOS structures with amorphous tungsten trioxide for capacitive humidity sensors

    • E. A. Tutov

    Microsystems 17 December 2008 Pages: 1561 - 1563

24. Parameter estimation technique for sensitive elements of microaccelerometers and micromirrors

    • S. P. Timoshenkov
    • A. N. Boĭko
    • B. M. Simonov

    Microsystems 17 December 2008 Pages: 1564 - 1568

25. The use of the photorefractive effect for comprehensive three-dimensional local measurements of electrical and thermal parameters of silicon structures

    • A. L. Filatov
    • A. V. Lugovskoĭ

    Measurement Techniques 17 December 2008 Pages: 1569 - 1572

26. Application of inversion voltammetry to microimpurity content control in synthetic sapphire

    • T. I. Khakhanina
    • A. A. Gurskaya

    Measurement Techniques 17 December 2008 Pages: 1573 - 1576