1. Simulation of the fluctuations of energy and charge deposited during e-beam exposure

   • S. S. Borisov
   • S. I. Zaitsev
   • E. A. Grachev

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 877 - 878

2. Cathodoluminescence studies of C₆₀ fullerene-based films and nanostructures

   • A. V. Nashchekin
   • S. V. Baryshev
   • O. A. Usov

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 879 - 881

3. Method for extracting of EXAFS oscillation function based on the variation principle

   • M. D. Sharkov
   • K. Ju. Pogrebitsky
   • S. G. Konnikov

   The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia Pages: 882 - 885

4. Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds

   • T. V. Gorkavenko
   • S. M. Zubkova
   • L. N. Rusina

   Electronic and Optical Properties of Semiconductors Pages: 886 - 896

5. Deformation potential constants of deep impurity centers in semiconductors with anisotropic valence band

   • E. B. Osipov
   • N. A. Osipova
   • S. D. Kangliev

   Electronic and Optical Properties of Semiconductors Pages: 897 - 899

6. Correction of the method of current-voltage characteristics for determination of density of surface states in the system of germanium-rare-earth element fluoride

   • M. B. Shalimova
   • E. G. Beschasnaya

   Electronic and Optical Properties of Semiconductors Pages: 900 - 903

7. Preparation of ZnO:N films by radical beam gettering epitaxy

   • I. V. Rogozin

   Electronic and Optical Properties of Semiconductors Pages: 904 - 908

8. Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters

   • V. Ya. Aleshkin
   • N. V. Vostokov
   • V. I. Shashkin

   Electronic and Optical Properties of Semiconductors Pages: 909 - 913

9. Photoluminescence and composition of amorphous As₂Se₃ films modified with Er(thd)₃ complex compound

   • V. Kh. Kudoyarova
   • S. A. Kozyukhin
   • V. M. Lebedev

   Electronic and Optical Properties of Semiconductors Pages: 914 - 920

10. Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding

    • P. A. Ivanov
    • L. S. Kostina
    • I. V. Grekhov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 921 - 924

11. Effect of atmospheric-air pressure on charge transport in structures with oxidized porous silicon

    • D. I. Bilenko
    • O. Ya. Belobrovaya
    • E. I. Khasina

    Semiconductor Structures, Interfaces, and Surfaces Pages: 925 - 929

12. Determination of the composition and strains in Ge_xSi_1−x -based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface

    • V. A. Volodin
    • M. D. Efremov
    • A. V. Dvurechenskiĭ

    Low-Dimensional Systems Pages: 930 - 934

13. Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots

    • S. V. Kondratenko
    • A. S. Nikolenko
    • A. I. Vodyanitsky

    Low-Dimensional Systems Pages: 935 - 938

14. Formation and optical properties of CuInTe₂ nanoparticles in silicate matrices

    • I. V. Bodnar’
    • V. S. Gurin
    • A. P. Molochko

    Low-dimensional Systems Pages: 939 - 945

15. Allotropic composition of amorphous carbon

    • S. G. Yastrebov
    • V. I. Ivanov-Omskiĭ

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 946 - 952

16. Modification of the properties of porous silicon on adsorption of iodine molecules

    • A. S. Vorontsov
    • L. A. Osminkina
    • P. K. Kashkarov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 953 - 957

17. A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment

    • G. M. Voronkova
    • V. D. Popov
    • G. A. Protopopov

    Physics of Semiconductor Devices Pages: 958 - 961

18. The effect of NO₂ adsorption on optical and electrical properties of porous silicon layers

    • V. V. Bolotov
    • I. V. Ponomareva
    • V. E. Kan

    Physics of Semiconductor Devices Pages: 962 - 964

19. Instability of current and N-shaped current-voltage characteristic in a silicon p-i-n diode subjected to a magnetic field

    • I. K. Kamilov
    • K. M. Aliev
    • N. S. Abakarova

    Physics of Semiconductor Devices Pages: 965 - 969

20. Enhancement of the Raman scattering in grooved silicon structures

    • A. V. Zoteev
    • L. A. Golovan’
    • T. S. Perova

    Physics of Semiconductor Devices Pages: 970 - 972

21. Cadmium-free thin-film Cu(In,Ga)Se₂/(In₂S₃) heterophotoelements: Fabrication and properties

    • V. B. Zalesski
    • V. Yu. Rud’
    • M. S. Tivanov

    Physics of Semiconductor Devices Pages: 973 - 978

22. Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects

    • A. M. Ivanov
    • N. B. Strokan
    • A. A. Lebedev

    Physics of Semiconductor Devices Pages: 979 - 983

23. Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation

    • D. A. Vinokurov
    • V. A. Kapitonov
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 984 - 990

24. Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

    • I. V. Antonova
    • R. A. Soots
    • V. Ya. Prints

    Fabrication, Treatment, and Testing of Materials and Structures Pages: 991 - 997

25. Formation of nanoparticles on the silicon surface under the effect of femtosecond laser pulses

    • S. V. Zabotnov
    • A. A. Ezhov
    • P. K. Kashkarov

    Fabrication, Treatment, and Testing of Materials and Structures Pages: 998 - 1001

26. Leonid Stepanovich Smirnov (dedicated to his 75th birthday)

    Personalia Pages: 1002 - 1003