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Enhancement of the Raman scattering in grooved silicon structures

  • Physics of Semiconductor Devices
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Abstract

The Raman effect in grooved silicon structures consisting of an array of cavities (grooves) and silicon layers is studied. It is found that the intensity of the Stokes component increases severalfold when the thickness of the silicon layers (1–2 μm) is close to the excitation wavelength. The results obtained, interpreted as a manifestation of the effects of localization of light, suggest that grooved structures of this kind offer promise as matrices providing for enhanced efficiency of the Raman scattering.

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Author information

Authors and Affiliations

  1. Faculty of Physics, Moscow State University, Moscow, 119992, Russia

    A. V. Zoteev, L. A. Golovan’, E. Yu. Krutkova, A. V. Laktyun’kin, D. A. Mamichev, P. K. Kashkarov & V. Yu. Timoshenko

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    E. V. Astrova

  3. Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin 2, Ireland

    T. S. Perova

Authors
  1. A. V. Zoteev
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  2. L. A. Golovan’
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  3. E. Yu. Krutkova
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  4. A. V. Laktyun’kin
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  5. D. A. Mamichev
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  6. P. K. Kashkarov
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  7. V. Yu. Timoshenko
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  8. E. V. Astrova
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  9. T. S. Perova
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Additional information

Original Russian Text © A.V. Zoteev, L.A. Golovan’, E.Yu. Krutkova, A.V. Laktyun’kin, D.A. Mamichev, P.K. Kashkarov, V.Yu. Timoshenko, E.V. Astrova, T.S. Perova, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 8, pp. 989–991.

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Zoteev, A.V., Golovan’, L.A., Krutkova, E.Y. et al. Enhancement of the Raman scattering in grooved silicon structures. Semiconductors 41, 970–972 (2007). https://doi.org/10.1134/S1063782607080209

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  • DOI: https://doi.org/10.1134/S1063782607080209

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