1. Vacancy kinetics in heteropolytype epitaxy of SiC

   • S. Yu. Davydov
   • A. A. Lebedev

   Review Pages: 621 - 624

2. Threshold stresses for motion of dislocations in extrinsic semiconductors

   • B. V. Petukhov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 625 - 630

3. Special features of annealing of radiation defects in irradiated p-Si crystals

   • T. A. Pagava

   Electronic and Optical Properties of Semiconductors Pages: 631 - 633

4. Conductivity and photoconductivity of polymeric composites containing heteropolynuclear Cu(II)/Mn(II) complex in the presence of ionic polymethine dyes

   • N. A. Davidenko
   • V. N. Kokozay
   • A. N. Popenaka

   Electronic and Optical Properties of Semiconductors Pages: 634 - 640

5. Temperature dependence of the band structure of wurtzite-type semiconductor compounds: Gallium and aluminum nitrides

   • T. V. Gorkavenko
   • S. M. Zubkova
   • L. N. Rusina

   Electronic and Optical Properties of Semiconductors Pages: 641 - 650

6. Electrical properties of undoped high-resistivity n-CdTe polycrystals

   • Yu. V. Klevkov
   • S. A. Kolosov
   • A. F. Plotnikov

   Electronic and Optical Properties of Semiconductors Pages: 651 - 654

7. Ferromagnetism and anomalous transport in GaAs doped by implantation of Mn and Mg ions

   • V. A. Kul’bacinskiĭ
   • P. V. Gurin
   • K. Onomitsu

   Electronic and Optical Properties of Semiconductors Pages: 655 - 659

8. Preparation and optical properties of the co-doped ZnTe single crystals

   • Yu. F. Vaksman
   • Yu. A. Nitsuk
   • P. V. Shapkin

   Electronic and Optical Properties of Semiconductors Pages: 660 - 662

9. Photoconductivity of the Pb_0.75Sn_0.25Te:In alloy in an alternating electric field

   • A. E. Kozhanov
   • A. V. Nikorich
   • V. Shklover

   Electronic and Optical Properties of Semiconductors Pages: 663 - 665

10. Manifestation of clustering of Ge atoms in the spectra of electron spin resonance of Si_{1 − x} Ge _x alloys (0 < x < 0.057)

    • A. I. Veinger
    • A. G. Zabrodskiĭ
    • N. V. Abrosimov

    Electronic and Optical Properties of Semiconductors Pages: 666 - 672

11. The effect of narrowing of the band gap on surface recombination in silicon

    • A. V. Sachenko
    • I. O. Sokolovsky

    Semiconductor Structures, Interfaces, and Surfaces Pages: 673 - 678

12. Structural and electrical properties of the Ge _x Si_1−x /Si heterojunctions obtained by the method of direct bonding

    • T. S. Argunova
    • E. I. Belyakova
    • N. V. Abrosimov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 679 - 683

13. Transfer ratio of Langmuir-Blodgett films as an indicator of the single-crystal silicon surface modified by polyionic layers

    • A. M. Yashchenok
    • D. A. Gorin
    • M. K. Grachev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 684 - 688

14. Effect of the bias electric field on the spectral distribution of the photodielectric effect in the Schottky-barrier structures based on the cadmium-zinc telluride crystals

    • V. K. Komar’
    • V. M. Puzikov
    • S. L. Abashin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 689 - 695

15. On the electron affinity of silicon carbide polytypes

    • S. Yu. Davydov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 696 - 698

16. The effect of low-field injection of charge carriers on the electrical properties of the metal-oxide-semiconductor structures

    • V. N. Mordkovich
    • A. D. Mokrushin
    • N. M. Omel’yanovskaya

    Semiconductor Structures, Interfaces, and Surfaces Pages: 699 - 703

17. Electron-photon drag effect in a semiconductor superlattice subjected to a high electric field

    • D. V. Zav’yalov
    • S. V. Kryuchkov
    • E. I. Kukhar’

    Low-Dimensional Systems Pages: 704 - 707

18. Random lasing in vertical ZnO nanorods

    • A. N. Gruzintsev
    • A. N. Red’kin
    • C. Barthou

    Low-Dimensional Systems Pages: 708 - 712

19. Variations in the intensity of lasing in vertical ZnO nanorods with polarization of optical excitation

    • A. N. Gruzintsev
    • A. N. Red’kin
    • P. Benalloul

    Low-Dimensional Systems Pages: 713 - 717

20. A discrete model of the development and relaxation of a local microbreakdown in silicon avalanche photodiodes operating in the Geiger mode

    • I. V. Vanyushin
    • V. A. Gergel
    • I. M. Shcheleva

    Physics of Semiconductor Devices Pages: 718 - 722

21. Color capabilities of ZnS:(CuCl,Ga) luminophores depending on the sequence of doping with CuCl and gallium

    • Yu. Yu. Bacherikov
    • N. V. Kitsyuk

    Physics of Semiconductor Devices Pages: 723 - 726

22. High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD

    • V. M. Lantratov
    • N. A. Kalyuzhnyĭ
    • V. M. Andreev

    Physics of Semiconductor Devices Pages: 727 - 731

23. The effect of damaging radiation (p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions

    • V. M. Andreev
    • V. V. Evstropov
    • V. P. Khvostikov

    Physics of Semiconductor Devices Pages: 732 - 736

24. Theory of stationary impact-ionization plane waves in semiconductors

    • A. S. Kyuregyan

    Physics of Semiconductor Devices Pages: 737 - 743