1. Mechanisms of current flow in metal-semiconductor ohmic contacts

   • T. V. Blank
   • Yu. A. Gol’dberg

   Review Pages: 1263 - 1292

2. Large-magnitude spin polarization of electrons in an InAs-based diode structure

   • Ya. V. Terent’ev
   • O. G. Lyublinskaya
   • S. V. Ivanov

   Electronic and Optical Properties of Semiconductors Pages: 1293 - 1296

3. Cathodoluminescence from dilute GaN _x As_1−x solutions (x ≤ 0.03)

   • P. N. Brunkov
   • A. A. Gutkin
   • V. S. Khrustalev

   Electronic and Optical Properties of Semiconductors Pages: 1297 - 1299

4. Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

   • N. A. Poklonski
   • S. A. Vyrko
   • A. G. Zabrodskii

   Electronic and Optical Properties of Semiconductors Pages: 1300 - 1306

5. Properties of CuIn₃Se₅ crystals and In/CuIn₃Se₅ structures

   • I. V. Bodnar’
   • V. Yu. Rud’
   • Yu. V. Rud’

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1307 - 1309

6. Barrier-height measurement for a gallium arsenide metal-semi-insulator interface

   • G. I. Ayzenshtat
   • M. A. Lelekov
   • O. P. Tolbanov

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1310 - 1311

7. Erbium ion electroluminescence in p ⁺⁺/n ⁺/n-Si:Er/n ⁺⁺ silicon diode structures

   • V. P. Kuznetsov
   • D. Yu. Remizov
   • Z. F. Krasil’nik

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1312 - 1314

8. Transport properties of two-dimensional hole gas in a Ge_1−x Si _x /Ge/Ge_1−x Si _x quantum well in the vicinity of metal-insulator transition

   • Yu. G. Arapov
   • V. N. Neverov
   • L. Ponomarenko

   Low-Dimensional Systems Pages: 1315 - 1322

9. Excition states in semiconductor quantum dots in the modified effective mass approximation

   • S. I. Pokutnyĭ

   Low-Dimensional Systems Pages: 1323 - 1328

10. Integer quantum Hall effect and correlated disorder

    • A. A. Greshnov
    • G. G. Zegrya

    Low-Dimensional Systems Pages: 1329 - 1334

11. Capacitance studies of multilayer ensembles of InAs QDs in a GaAs matrix

    • A. A. Gutkin
    • P. N. Brunkov
    • S. G. Konnikov

    Low-Dimensional Systems Pages: 1335 - 1338

12. Production of quantum dots by selective interdiffusion in CdTe/CdMgTe quantum wells

    • S. V. Zaitsev
    • M. K. Welsch
    • G. Bacher

    Low-Dimensional Systems Pages: 1339 - 1344

13. CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy with a CdTe submonolayer stressor

    • I. V. Sedova
    • O. G. Lyublinskaya
    • S. V. Ivanov

    Low-Dimensional Systems Pages: 1345 - 1350

14. Specific features of dissipation of electronic excitation energy in coupled molecular solid systems based on silicon nanocrystals on intense optical pumping

    • D. A. Palenov
    • D. M. Zhigunov
    • V. Yu. Timoshenko

    Low-Dimensional Systems Pages: 1351 - 1355

15. Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers

    • M. V. Shaleev
    • A. V. Novikov
    • Z. F. Krasil’nik

    Low-Dimensional Systems Pages: 1356 - 1360

16. Raman scattering in semiconductor structures based on monophthalocyanine and triphthalocyanine molecules incorporating erbium ions

    • I. A. Belogorokhov
    • E. V. Tikhonov
    • D. R. Khokhlov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 1361 - 1363

17. Frequency shift in a system of two laser diodes

    • A. A. Biryukov
    • B. N. Zvonkov
    • Vl. V. Kocharovskii

    Physics of Semiconductor Devices Pages: 1364 - 1368

18. Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C

    • S. A. Karandashev
    • B. A. Matveev
    • N. G. Tarakanova

    Physics of Semiconductor Devices Pages: 1369 - 1374

19. Two-band combined model of a resonant tunneling diode

    • I. I. Abramov
    • I. A. Goncharenko
    • N. V. Kolomeitseva

    Physics of Semiconductor Devices Pages: 1375 - 1380

20. Specific features of dynamic injection and base layer modulation processes in power n ⁺-p-p ⁺ diodes

    • T. T. Mnatsakanov
    • M. E. Levinshtein
    • S. N. Yurkov

    Physics of Semiconductor Devices Pages: 1381 - 1387