1. Structural changes induced by neutron irradiation and heat treatments in InSb single crystals

   • V. M. Boĭko
   • V. T. Bublik
   • K. D. Shcherbachev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 749 - 757

2. Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

   • A. V. Boĭtsov
   • N. A. Bert
   • B. R. Semyagin

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 758 - 762

3. Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

   • E. A. Gurieva
   • P. P. Konstantinov
   • Yu. I. Ravich

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 763 - 767

4. Diffusion of yittrium in silicon

   • D. É. Nazyrov
   • M. I. Bazarbaev
   • A. A. Iminov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 768 - 769

5. Mechanism of nucleation of oriented cadmium telluride films forming under highly nonequilibrium conditions

   • A. P. Belyaev
   • V. P. Rubets
   • V. V. Antipov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 770 - 773

6. Diffusion ZnTe:Sn layers with n-type conductivity

   • V. P. Makhny
   • V. I. Grivul

   Electronic and Optical Properties of Semiconductors Pages: 774 - 775

7. Role of the impurity band during the insulator-metal transition as the composition of highly doped and compensated TiCo_1–x Ni_xSb semiconductor alloy is varied. Donor impurities

   • V. A. Romaka
   • M. G. Shelyapina
   • V. F. Chekurin

   Electronic and Optical Properties of Semiconductors Pages: 776 - 780

8. Variation in electrical properties of the Cd_{1 − x} Zn_xTe crystals as a result of heat treatment

   • E. S. Nikoniuk
   • Z. I. Zakharuk
   • M. A. Kovalets

   Electronic and Optical Properties of Semiconductors Pages: 781 - 784

9. Ultrafast self-modulation of the optical absorption spectrum under conditions of both the ultrashort optical pumping and superluminescence in GaAs

   • N. N. Ageeva
   • I. L. Bronevoĭ
   • S. V. Stegantsov

   Electronic and Optical Properties of Semiconductors Pages: 785 - 793

10. Preparation and optical properties of Co-doped ZnSe single crystals

    • Yu. F. Vaksman
    • V. V. Pavlov
    • P. V. Shapkin

    Electronic and Optical Properties of Semiconductors Pages: 794 - 797

11. The effect of high magnetic field on the photoresponse of Si:B structures with blocked conductivity in the impurity band

    • B. A. Aronzon
    • A. N. Drachenko
    • J. Leotin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 798 - 802

12. Negative capacitance (impedance of the inductive type) of silicon p ⁺-n junctions irradiated with fast electrons

    • N. A. Poklonski
    • S. V. Shpakovski
    • S. B. Lastovskii

    Semiconductor Structures, Interfaces, and Surfaces Pages: 803 - 807

13. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    • P. B. Parchinskiĭ
    • S. I. Vlasov
    • L. G. Ligaĭ

    Semiconductor Structures, Interfaces, and Surfaces Pages: 808 - 811

14. Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region

    • S. A. Blokhin
    • O. A. Usov
    • V. M. Ustinov

    Low-Dimensional Systems Pages: 812 - 817

15. The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures

    • I. N. Kotel’nikov
    • S. E. Dizhur
    • N. A. Mordovets

    Low-Dimensional Systems Pages: 818 - 824

16. Higher harmonics in the current oscillations in weakly coupled GaAs/AlGaAs superlattices

    • G. K. Rasulova
    • N. P. Brunkov
    • V. M. Ustinov

    Low-Dimensional Systems Pages: 825 - 828

17. Spectral ellipsometry of a nanodiamond composite

    • S. G. Yastrebov
    • S. K. Gordeev
    • V. I. Ivanov-Omskiĭ

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 829 - 833

18. Infrared and submillimeter spectroscopy of grooved silicon structures

    • E. Yu. Krutkova
    • V. Yu. Timoshenko
    • A. A. Volkov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 834 - 838

19. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density

    • I. V. Rozhansky
    • D. A. Zakheim

    Physics of Semiconductor Devices Pages: 839 - 845

20. Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy

    • V. P. Kuznetsov
    • D. Yu. Remizov
    • G. A. Maksimov

    Physics of Semiconductor Devices Pages: 846 - 853

21. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

    • I. N. Arsent’ev
    • A. V. Bobyl’
    • I. B. Mamontova

    Physics of Semiconductor Devices Pages: 854 - 859

22. Electroluminescence in the region of interband transitions in a high-efficiency silicon light-emitting diode with a small area of the rectifying contact

    • A. M. Emel’yanov
    • V. V. Zabrodskiĭ
    • V. L. Sukhanov

    Physics of Semiconductor Devices Pages: 860 - 863

23. Carrier transport in a SiC detector subjected to extreme radiation doses

    • A. M. Ivanov
    • A. A. Lebedev
    • N. B. Strokan

    Physics of Semiconductor Devices Pages: 864 - 867