Abstract
Transmission of grooved silicon structures with 4-and 7-μm periods is studied by polarization-sensitive IR and submillimeter spectroscopy in a wide spectral range. The experimental results obtained in the range 1–10-μm are explained in terms of geometrical optics taking into account the scattering of radiation. In the far-IR (20–2000 μm) range, the structures exhibit a strong birefringence, which can be described in terms of the effective medium model in the electrostatic approximation. An influence of photoexcitation on the optical transmission and its anisotropy is observed; this effect can be explained in terms of the effective medium model taking into account the interaction of radiation with free carriers.
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Original Russian Text © E.Yu. Krutkova, V.Yu. Timoshenko, L.A. Golovan’, P.K. Kashkarov, E.V. Astrova, T.S. Perova, B.P. Gorshunov, A.A. Volkov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 7, pp. 855–860.
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Krutkova, E.Y., Timoshenko, V.Y., Golovan, L.A. et al. Infrared and submillimeter spectroscopy of grooved silicon structures. Semiconductors 40, 834–838 (2006). https://doi.org/10.1134/S1063782606070189
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DOI: https://doi.org/10.1134/S1063782606070189