1. Effect of irradiation with reactor neutrons and the temperature of subsequent heat treatment on the structure of InP single crystals

   • V. M. Boĭko
   • V. T. Bublik
   • K. D. Shcherbatchev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 621 - 629

2. Diffusion of terbium in silicon

   • D. E. Nazyrov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 630 - 631

3. Numerical simulation of the dynamics of phase transitions in CdTe induced by irradiation with nanosecond pulses of an excimer laser

   • S. P. Zhvavyi
   • G. L. Zykov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 632 - 635

4. Electronic properties and bulk moduli of new boron nitride polymorphs, i.e., hyperdiamond B₁₂N₁₂ and simple cubic B₂₄N₂₄, B₁₂N₁₂ fulborenites

   • V. V. Pokropivny
   • V. L. Bekenev

   Electronic and Optical Properties of Semiconductors Pages: 636 - 641

5. Nonmonotonic behavior of magnetophotoconductivity in p-CdHgTe

   • D. Yu. Protasov
   • V. Ya. Kostyuchenko
   • V. N. Ovsyuk

   Electronic and Optical Properties of Semiconductors Pages: 642 - 645

6. Electrical characteristics of CdTe:Pb single crystals at high temperatures

   • P. M. Fochuk
   • O. A. Parfenyuk
   • O. E. Panchuk

   Electronic and Optical Properties of Semiconductors Pages: 646 - 650

7. The effect of electromotive-force generation on electrical properties of thin samarium sulfide films

   • V. V. Kaminskiĭ
   • M. M. Kazanin
   • N. M. Volodin

   Electronic and Optical Properties of Semiconductors Pages: 651 - 654

8. Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors

   • V. A. Romaka
   • M. G. Shelyapina
   • V. F. Chekurin

   Electronic and Optical Properties of Semiconductors Pages: 655 - 661

9. Photoluminescence in the Pb_1−x Cd_xSe polycrystalline layers activated in the presence of iodine vapor

   • A. E. Gamarts
   • V. A. Moshnikov
   • D. B. Chesnokova

   Electronic and Optical Properties of Semiconductors Pages: 662 - 664

10. Radiative lifetimes of electrons and holes in a thin semiconductor layer

    • V. I. Pipa

    Semiconductor Structures, Interfaces, and Surfaces Pages: 665 - 667

11. Magnetooptical properties of quantum wells with D ⁽⁻⁾ centers

    • V. D. Krevchik
    • A. B. Grunin
    • Vas. V. Evstifeev

    Low-Dimensional Systems Pages: 668 - 674

12. Self-consistent calculation of tunneling current in w-GaN/AlGaN(0001) two-barrier heterostructures

    • S. N. Grinyaev
    • A. N. Razzhuvalov

    Low-Dimensional Systems Pages: 675 - 680

13. Charge accumulation effects in quantum-well structures

    • A. V. Gierus
    • T. G. Gierus

    Low-Dimensional Systems Pages: 681 - 686

14. An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures

    • A. V. Bobyl
    • A. A. Gutkin
    • Zh. I. Alferov

    Low-Dimensional Systems Pages: 687 - 690

15. Analysis of frequency dependences of conductance of MIS structures with the fluctuation-and tunneling-based theoretical models taken into account

    • N. A. Avdeev
    • V. A. Gurtov
    • R. A. Yakovlev

    Physics of Semiconductor Devices Pages: 691 - 696

16. Flip-chip LEDs with deep mesa emitting at 4.2 µm

    • N. V. Zotova
    • N. D. Il’inskaya
    • N. M. Stus’

    Physics of Semiconductor Devices Pages: 697 - 703

17. Electrical and gas-sensitive properties of a resistive thin-film sensor based on tin dioxide

    • O. V. Anisimov
    • V. I. Gaman
    • E. V. Chernikov

    Physics of Semiconductor Devices Pages: 704 - 709

18. Problems of efficiency of photoelectric conversion in thin-film CdS/CdTe solar cells

    • L. A. Kosyachenko

    Physics of Semiconductor Devices Pages: 710 - 727

19. Effect of the design and technology factors on electrical characteristics of the Au/Ti-n-GaAs Schottky diodes

    • D. N. Zakharov
    • V. M. Kalygina
    • A. V. Panin

    Physics of Semiconductor Devices Pages: 728 - 733

20. Diffusion-barrier contacts based on the TiN and Ti(Zr)B_x interstitial phases in the microwave diodes for the range of 75–350 GHz

    • N. S. Boltovets
    • V. N. Ivanov
    • G. E. Cirlin

    Physics of Semiconductor Devices Pages: 734 - 738

21. Luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes based on p-n InGaN/GaN heterostructures with phosphor coatings

    • M. L. Badgutdinov
    • E. V. Korobov
    • N. P. Soshchin

    Physics of Semiconductor Devices Pages: 739 - 744

22. High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure

    • D. A. Vinokurov
    • A. L. Stankevich
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 745 - 748