Abstract
A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)Bx interstitial phases is used in the development of microwave diodes for the millimeter region (with the frequency higher than 100 GHz) based on GaAs, InP, and Si. It became possible to increase the reliability of the GaAs-and InP-based Gunn diodes that operate at the frequency of 200 GHz by using the epitaxial layers formed on porous III–V substrates by gas-phase, molecular-beam, and liquid-phase epitaxy as the initial device structures. The range of emission from the avalanche transit-time diodes based on Si is extended to 350 GHz. To this end, the technology of forming the active element on the silicon metallized diaphragm is used for the first time.
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Original Russian Text © N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudrik, V.V. Milenin, I.N. Arsent’ev, A.V. Bobyl, P.N. Brunkov, I.S. Tarasov, A.A. Tonkikh, V.P. Ulin, V.V. Ustinov, G.E. Cirlin, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 6, pp. 753–757.
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Boltovets, N.S., Ivanov, V.N., Belyaev, A.E. et al. Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz. Semiconductors 40, 734–738 (2006). https://doi.org/10.1134/S1063782606060200
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DOI: https://doi.org/10.1134/S1063782606060200