The theory of the formation of multilayered thin films on solid surfaces V. G. DubrovskiĭN. V. SibirevV. M. Ustinov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 249 - 256
Surface acoustic breathers in semiconductors G. T. AdamashviliN. T. AdamashviliM. D. Peikrishvili Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 257 - 261
Nonlinear longitudinal waves of interacting fields of deformation and defect concentration in germanium and silicon F. Kh. Mirzade Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 262 - 269
Island size distribution under conditions of dislocation-surface diffusion in semiconductor heterostructures R. D. VengrenovichA. V. MoskalyukS. V. Yarema Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 270 - 275
Band gap and optical properties of the CdxHg1 − x − y ZnyTe alloys in ultraviolet and visible spectral regions A. I. BelogorokhovA. A. FlorentsevA. V. Elyutin Electronic and Optical Properties of Semiconductors Pages: 276 - 281
Laser-stimulated compensation of bulk defects in p-CdZnTe S. V. PlyatskoL. V. Rashkovets’kyi Electronic and Optical Properties of Semiconductors Pages: 282 - 290
Conductivity of charge-ordered layered crystals in quantizing magnetic fields in the inversion region of the nonoscillating magnetoresistance component P. V. Gorskyi Electronic and Optical Properties of Semiconductors Pages: 291 - 298
On the effect of vacancies in the silicon and carbon sublattices on the formation of a Schottky barrier at the Metal-SiC interface S. Yu. DavydovO. V. Posrednik Electronic and Optical Properties of Semiconductors Pages: 299 - 301
A model of the conductivity of p-type polycrystalline silicon with regard to current spreading in crystallites V. M. Lubimskiĭ Electronic and Optical Properties of Semiconductors Pages: 302 - 308
Influence of insulator thickness nonuniformity on the switching of the Al/SiO2/n-Si tunnel MOS structure at reverse bias S. E. TyaginovM. I. VexlerI. V. Grekhov Semiconductor Structures, Interfaces, and Surfaces Pages: 309 - 313
Formation of defects in GaAs and Si as a result of Pd deposition onto the surface I. A. KarpovichS. V. TikhovI. A. Andryushchenko Semiconductor Structures, Interfaces, and Surfaces Pages: 314 - 318
Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy Yu. B. BolkhovityanovA. S. DeryabinL. V. Sokolov Semiconductor Structures, Interfaces, and Surfaces Pages: 319 - 326
Spectral sensitivity of p-Cu1.8S/n −-ZnS/n-(II-VI) heterostructures V. N. KomaschenkoK. V. KolezhukYu. N. Bobrenko Semiconductor Structures, Interfaces, and Surfaces Pages: 327 - 330
Coupling of electron states in the InAs/GaAs quantum dot molecule M. M. SobolevA. E. ZhukovYu. G. Musikhin Low-Dimensional Systems Pages: 331 - 337
Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1−x Gex layer Yu. N. DrozdovZ. F. Krasil’nikA. N. Yablonskiĭ Low-Dimensional Systems Pages: 338 - 341
InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm V. S. MikhrinA. P. Vasil’evV. M. Ustinov Low-Dimensional Systems Pages: 342 - 345
Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures L. B. KarlinaA. S. VlasovN. Kh. Timoshina Physics of Semiconductor Devices Pages: 346 - 350
The flip-chip InGaAsSb/GaSb LEDs emitting at a wavelength of 1.94 μm N. V. ZotovaN. D. Il’inskayaA. A. Shlenskiĭ Physics of Semiconductor Devices Pages: 351 - 356
A large enhancement of the maximum drift velocity of electrons in the channel of a field-effect heterotransistor J. K. PoželaV. G. Mokerov Physics of Semiconductor Devices Pages: 357 - 361
A quantum-dot heterostructure transistor with enhanced maximum drift velocity of electrons V. MokerovJ. PoželaV. Juciene Physics of Semiconductor Devices Pages: 362 - 366
The role of one-dimensional diffusion in a growth model of the surface of a Kossel’s crystal A. M. BoĭkoR. A. Suris Physics of Semiconductor Devices Pages: 367 - 374
Determination of the coefficient of light attenuation in thin layers of light-emitting diodes A. A. EfremovD. V. TarkhinYu. G. Shreter Physics of Semiconductor Devices Pages: 375 - 378