Abstract
Photosensitivity of multilayered p-Cu1.8S/n −-(II-VI)/n-(II-VI) heterostructures beyond the fundamental-absorption edge of the wide-gap component is studied experimentally, and a simple model is suggested as an explanation of this photosensitivity. It is established that an effective method for reducing the photosensitivity of the structures beyond the ultraviolet spectral region consists in decreasing the probability of dominant tunneling processes, by increasing the thickness of the wide-gap layer, giving rise to a blocking barrier for photogenerated minority charge carriers. It is shown that the p-Cu1.8S/n −-ZnS/n-CdSe heterostructures are promising for the development of efficient “solar-blind” detectors of ultraviolet radiation.
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Original Russian Text © V.N. Komashchenko, K.V. Kolezhuk, N.V. Yaroshenko, G.I. Sheremetova, Yu.N. Bobrenko, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 3, pp. 332–335.
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Komaschenko, V.N., Kolezhuk, K.V., Yaroshenko, N.V. et al. Spectral sensitivity of p-Cu1.8S/n −-ZnS/n-(II-VI) heterostructures. Semiconductors 40, 327–330 (2006). https://doi.org/10.1134/S1063782606030134
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DOI: https://doi.org/10.1134/S1063782606030134