1. Thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe, and MnHgTe alloys

   • V. G. Deibuk
   • S. G. Dremlyuzhenko
   • S. É. Ostapov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1111 - 1116

2. Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge_1−x Si_x

   • A. I. Veinger
   • A. G. Zabrodskii
   • T. V. Tisnek

   Electronic and Optical Properties of Semiconductors Pages: 1117 - 1121

3. Features of physical differentiation with respect to light absorbance in junction photovoltage spectra

   • L. I. Berezhinskii
   • E. F. Venger
   • B. K. Serdega

   Electronic and Optical Properties of Semiconductors Pages: 1122 - 1127

4. Mechanism of radiative recombination in the region of interband transitions in Si-Ge solid solutions

   • A. M. Emel’yanov
   • N. A. Sobolev
   • N. V. Abrosimov

   Electronic and Optical Properties of Semiconductors Pages: 1128 - 1130

5. Magnetism of III–V crystals doped with rare-earth elements

   • N. T. Bagraev
   • V. V. Romanov

   Electronic and Optical Properties of Semiconductors Pages: 1131 - 1140

6. Study of certain properties of Si-Si_1−x Ge_x (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

   • B. Sapaev
   • A. S. Saidov

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1141 - 1146

7. Formation of potential barriers in undoped disordered semiconductors

   • N. V. Vishnyakov
   • S. P. Vikhrov
   • A. A. Popov

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1147 - 1152

8. Stabilization of charge at the interface between the buried insulator and silicon in silicon-on-insulator structures

   • I. V. Antonova

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1153 - 1157

9. Radiative recombination in GaN nanocrystals at high intensities of optical excitation

   • A. N. Gruzintsev
   • A. N. Red’kin
   • C. Barthou

   Low-Dimensional Systems Pages: 1158 - 1161

10. Spin splitting of the X-valley donor impurity states in AlAs barriers and the spatial distribution of the probability density of their wave functions

    • E. E. Vdovin
    • Yu. N. Khanin

    Low-Dimensional Systems Pages: 1162 - 1167

11. Effect of quantum confinement on optical properties of Ge nanocrystals in GeO₂ films

    • E. B. Gorokhov
    • V. A. Volodin
    • M. D. Efremov

    Low-Dimensional Systems Pages: 1168 - 1175

12. Electronic structure and spectral properties of Si₄₆ and Na₈Si₄₆ clathrates

    • S. I. Kurganskii
    • N. A. Borshch
    • N. S. Pereslavtseva

    Low-Dimensional Systems Pages: 1176 - 1181

13. Terahertz electroluminescence originating from spatially indirect intersubband transitions in a GaAs/AlGaAs quantum-cascade structure

    • G. F. Glinskii
    • A. V. Andrianov
    • N. N. Zinov’ev

    Low-Dimensional Systems Pages: 1182 - 1187

14. Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers

    • N. V. Kryzhanovskaya
    • A. G. Gladyshev
    • D. Bimberg

    Low-Dimensional Systems Pages: 1188 - 1193

15. Study of the properties of a two-dimensional electron gas in p ⁻-3C-SiC/n ⁺-6H-SiC heterostructures at low temperatures

    • A. A. Lebedev
    • D. K. Nel’son
    • A. E. Cherenkov

    Low-Dimensional Systems Pages: 1194 - 1196

16. Kinetics of structural and phase transformations in thin SiO_x films in the course of a rapid thermal annealing

    • V. A. Dan’ko
    • I. Z. Indutnyi
    • P. E. Shepelyavyi

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1197 - 1203

17. A quasi-hydrodynamic modification of the uniform-channel approximation in MOS-transistor theory

    • V. A. Gergel’
    • M. N. Yakupov

    Physics of Semiconductor Devices Pages: 1204 - 1209

18. Temperature dependence of the threshold current of QW lasers

    • N. L. Bazhenov
    • K. D. Mynbaev
    • G. G. Zegrya

    Physics of Semiconductor Devices Pages: 1210 - 1214

19. Mid-and far-IR focal plane arrays based on Hg_1−x Cd_xTe photodiodes

    • V. I. Stafeev
    • K. O. Boltar’
    • A. M. Filachev

    Physics of Semiconductor Devices Pages: 1215 - 1223

20. Structural mechanisms of optimization of the photoelectric properties of CdS/CdTe thin-film heterostructures

    • G. S. Khrypunov

    Physics of Semiconductor Devices Pages: 1224 - 1228

21. Electroluminescent properties of strained p-Si LEDs

    • N. A. Sobolev
    • A. M. Emel’yanov
    • E. B. Yakimov

    Physics of Semiconductor Devices Pages: 1229 - 1232

22. Interpretation of the visible photoluminescence of inequisized silicon nanoparticles suspended in ethanol

    • V. E. Ogluzdin

    Erratum Pages: 1233 - 1233