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Spin splitting of the X-valley donor impurity states in AlAs barriers and the spatial distribution of the probability density of their wave functions

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Abstract

Using magnetotunneling spectroscopy, the spin splitting of the ground state of Si donors associated with the X valley in an AlAs barrier has been observed. The magnitude of the effective g I factor in an AlAs barrier is found to be equal to 2.2 ± 0.1. It has also been found that the distribution of the probability density of electron wave functions of donor impurity states has a biaxial symmetry in the growth plane and axes corresponding to the principal crystalline directions in this plane.

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Authors and Affiliations

  1. Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    E. E. Vdovin & Yu. N. Khanin

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  1. E. E. Vdovin
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  2. Yu. N. Khanin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 10, 2005, pp. 1204–1209.

Original Russian Text Copyright © 2005 by Vdovin, Khanin.

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Vdovin, E.E., Khanin, Y.N. Spin splitting of the X-valley donor impurity states in AlAs barriers and the spatial distribution of the probability density of their wave functions. Semiconductors 39, 1162–1167 (2005). https://doi.org/10.1134/1.2085264

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  • DOI: https://doi.org/10.1134/1.2085264

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