III International Conference on Amorphous and Microcrystalline Semiconductors (July 2–4, 2002) E. I. Terukov Conference. Review Pages: 741 - 743
Electron diffraction investigation of structural diversity of amorphous films of polymorphic TlInS2 D. I. IsmailovM. V. AlievaF. I. Aliev Conference. Electronic and Optical Properties of Semiconductors Pages: 744 - 747
The influence of a high and low content of Au impurity on the photoluminescence of stoichiometric and nonstoichiometric arsenic sulfide A. A. BabaevI. K. KamilovI. N. Trapeznikova Conference. Electronic and Optical Properties of Semiconductors Pages: 748 - 750
Spectra of fundamental optical functions of BeSe V. Val. SobolevV. V. Sobolev Conference. Electronic and Optical Properties of Semiconductors Pages: 751 - 756
Optical properties of imperfect In2Se3 V. Val. SobolevV. V. Sobolev Conference. Electronic and Optical Properties of Semiconductors Pages: 757 - 762
Spectral photosensitivity of a-SiGe:H/c-Si heterostructures A. A. Sherchenkov Conference. Semiconductor Structures, Interfaces, and Surfaces Pages: 763 - 765
Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films A. G. KazanskiiH. MellP. A. Forsh Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 766 - 768
On studying nanoporous-carbon-based composites by small-angle X-ray scattering É. A. Smorgonskaya Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 769 - 774
Fullerene single crystals as adsorbents of organic compounds V. I. BerezkinI. V. ViktorovskiiL. O. Khoroshko Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 775 - 783
X-raying studies of the nanoporous carbon structure produced from carbide materials R. N. KyuttA. M. DanishevskiiS. K. Gordeev Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 784 - 788
The influence of deposition conditions and alloying on the electronic properties of amorphous selenium S. O. KasapK. V. KoughiaR. E. Johanson Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 789 - 794
Synthesis and physical properties of Si(Ge)-Se-Te glasses L. A. KulakovaB. T. MelekhV. Kh. Kudoyarova Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 795 - 799
Effect of rare-earth impurities on the photoluminescence of Ge2S3 glass A. A. BabaevI. K. KamilovI. N. Trapeznikova Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 800 - 802
Influence of the order-disorder transition in the crystal electron subsystem on the electron density at lattice sites N. P. SereginT. R. StepanovaN. N. Troitskaya Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 803 - 806
Organic materials for photovoltaic and light-emitting devices T. A. YourreL. I. RudayaV. V. Shamanin Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 807 - 815
Optical and electrical properties of polyamide acid and metal-polymer complex based on terbium É. A. LebedevM. Ya. GoikhmanV. V. Kudryavtsev Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 816 - 817
Photosensitivity of new photoconductive polymers based on ruthenium-biquinolyl complexes E. L. AleksandrovaM. Ya. GoikhmanV. V. Kudryavtsev Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 818 - 820
Optical and photosensitive properties of comb-shaped polyamide-imides E. L. AleksandrovaM. Ya. GoikhmanA. V. Yakimanskii Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 821 - 824
A study of the effect of oxygen on the intensity of erbium photoluminescence in amorphous SiOx:(H, Er) films formed by DC magnetron sputtering Yu. K. UndalovE. I. TerukovV. Kh. Kudoyarova Conference. Amorphous, Vitreous, and Porous Semiconductors Pages: 825 - 831
Splitting of resonant optical modes in Fabry-Perot microcavities V. G. GolubevA. A. DukinN. A. Feoktistov Conference. Physics of Semiconductor Devices Pages: 832 - 837
The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen A. A. Vorob’evV. V. KorablevS. Yu. Karpov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 838 - 842
Simulation of growth kinetics of octahedral and platelike oxygen precipitates in silicon V. V. SvetukhinA. G. GrishinO. V. Prikhod’ko Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 843 - 845
Special features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: I. Effects of spin interaction A. I. VeingerA. G. ZabrodskiiE. N. Mokhov Electronic and Optical Properties of Semiconductors Pages: 846 - 854
Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system V. G. DubrovskiiV. A. EgorovV. M. Ustinov Electronic and Optical Properties of Semiconductors Pages: 855 - 860
Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode N. A. CherkashinM. V. MaksimovD. Bimberg Low-Dimensional Systems Pages: 861 - 865
