Structural disordering and viedemann-franz relation in melts of some II-IV-V2 semiconductors Ya. B. MagomedovM. A. Aidamirov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 367 - 369
Effect of crystallization of amorphous vanadium dioxide films on the parameters of a semiconductor-metal phase transition V. A. KlimovI. O. TimofeevaF. Silva-Andrade Electronic and Optical Properties of Semiconductors Pages: 370 - 374
Recombination current instability in epitaxial p +-n structures with impurity atoms locally incorporated into the n-type region and determination of the deep center parameters B. S. MuravskiiO. N. KulikovV. N. Chernyi Electronic and Optical Properties of Semiconductors Pages: 375 - 379
Optical reflection in (Pb0.78Sn0.22)1−x InxTe solid solutions with a high indium content A. N. VeisA. V. Nashchekin Electronic and Optical Properties of Semiconductors Pages: 380 - 383
Effect of lattice deformation on semiconducting properties of CrSi2 A. V. KrivosheevaV. L. ShaposhnikovV. E. Borisenko Electronic and Optical Properties of Semiconductors Pages: 384 - 389
Electrical properties of InAs irradiated with protons V. N. BrudnyiN. G. KolinA. I. Potapov Electronic and Optical Properties of Semiconductors Pages: 390 - 395
Influence of pulsed laser radiation on the morphology and photoelectric properties of InSb crystals V. A. GnatyukO. S. Gorodnychenko Electronic and Optical Properties of Semiconductors Pages: 396 - 398
IR birefringence in artificial crystal fabricated by anisotropic etching of silicon E. V. AstrovaT. S. PerovaA. Moore Electronic and Optical Properties of Semiconductors Pages: 399 - 403
Energy levels of vacancies and interstitial atoms in the band gap of silicon V. V. Lukjanitsa Electronic and Optical Properties of Semiconductors Pages: 404 - 413
Photosensitive structures based on ZnIn2Se4 single crystals A. A. VaipolinYu. A. NikolaevE. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 414 - 416
Special features of electron scattering at AlxGa1−x As/AlAs(001) interfaces S. N. GrinyaevG. F. KaravaevV. N. Chernyshov Semiconductor Structures, Interfaces, and Surfaces Pages: 417 - 425
The charge accumulation in an insulator and the states at interfaces of silicon-on-insulator structures as a result of irradiation with electrons and gamma-ray photons D. V. NikolaevI. V. AntonovaS. A. Smagulova Semiconductor Structures, Interfaces, and Surfaces Pages: 426 - 432
The effect of internal fields on tunneling current in strained GaN/AlxGa1−x N(0001) structures S. N. GrinyaevA. N. Razzhuvalov Semiconductor Structures, Interfaces, and Surfaces Pages: 433 - 438
Characteristics of gallium arsenide structures and Gunn devices based on them fabricated using the radiation-thermal technology M. V. ArdyshevV. M. Ardyshev Semiconductor Structures, Interfaces, and Surfaces Pages: 439 - 442
The influence of carbon on the properties of Si/SiGe heterostructures M. Ya. ValakhV. N. DzhaganV. A. Yukhimchuk Semiconductor Structures, Interfaces, and Surfaces Pages: 443 - 447
Effect of irradiation with low-energy Ar ions on the characteristics of the working and rear sides of single-crystal GaAs substrate A. S. AlalykinP. N. KrylovA. B. Fedotov Semiconductor Structures, Interfaces, and Surfaces Pages: 448 - 451
Generation-recombination centers in CdTe:V L. A. KosyachenkoS. Yu. ParanchichV. V. Motushchuk Semiconductor Structures, Interfaces, and Surfaces Pages: 452 - 455
Special features of formation and characteristics of Ni/21R-SiC Schottky diodes V. L. LitvinovK. D. DemakovV. V. Milenin Semiconductor Structures, Interfaces, and Surfaces Pages: 456 - 461
Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure I. E. TyschenkoA. B. TalochkinW. Skorupa Low-Dimensional Systems Pages: 462 - 467
Laser ultrasonic study of porous silicon layers S. M. ZharkiiA. A. KarabutovV. Yu. Timoshenko Amorphous, Vitreous, and Porous Semiconductors Pages: 468 - 472
Raman spectroscopy of amorphous carbon modified with iron S. G. YastrebovV. I. Ivanov-OmskiiC. Morosanu Amorphous, Vitreous, and Porous Semiconductors Pages: 473 - 476
Electrolytic fabrication of porous silicon with the use of internal current source D. N. GoryachevL. V. BelyakovO. M. Sreseli Amorphous, Vitreous, and Porous Semiconductors Pages: 477 - 481
3C-SiC p-n structures grown by sublimation on 6H-SiC substrates A. A. LebedevA. M. Strel’chukN. K. Poletaev Physics of Semiconductor Devices Pages: 482 - 484
Current and temperature tuning of quantum-well lasers operating in 2.0-to 2.4-µm range A. P. AstakhovaA. N. BaranovYu. P. Yakovlev Physics of Semiconductor Devices Pages: 485 - 490
Vladimir Ivanovich Ivanov-Omski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) (dedicated to his 70th birthday) Colleagues and friends, Editorial Board of the journal Fizika i tekhnika poluprovodnikov Personalia Pages: 491 - 492
