Abstract
The Ni/n-21R-SiC(0001) and \(Ni/n - 21R - SiC(000\bar 1)\) surface-barrier structures formed on 21R-SiC crystals doped to a concentration of (1–2)×1018 cm−3 and grown by the Lely method were investigated prior to and after rapid thermal annealing (RTA) in vacuum (10−2 Pa) in the temperature range of 450–1100°C. Using X-ray diffraction analysis and Auger analysis, it is shown that cubic NiSi2 and orthorhombic δ-Ni2Si and NiSi silicides coexist with pure Ni in starting samples. The RTA brings about a polymorphic transformation of these phases, which causes the transformation of a barrier contact to a rectifying one independently of the SiC face type, even at T≳600°C. The physicochemical mechanisms of degradation of these barrier structures are discussed.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 4, 2003, pp. 473–478.
Original Russian Text Copyright © 2003 by Litvinov, Demakov, Ageev, Svetlichny, Konakova, P. Lytvyn, O. Lytvyn, Milenin.
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Litvinov, V.L., Demakov, K.D., Ageev, O.A. et al. Special features of formation and characteristics of Ni/21R-SiC Schottky diodes. Semiconductors 37, 456–461 (2003). https://doi.org/10.1134/1.1568468
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DOI: https://doi.org/10.1134/1.1568468