Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy M. D. VilisovaA. E. KunitsynV. V. Chaldyshev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 953 - 957
Mechanism of copper diffusion over the Si(110) surface A. E. DolbakR. A. ZhachukB. Z. Olshanetsky Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 958 - 961
Internal friction and effective shear modulus of single-crystal silicon in early stages of oxygen precipitation V. V. MotskinA. V. Oleinich-LysyuckI. M. Fodchuk Electronic and Optical Properties of Semiconductors Pages: 962 - 965
The temperature and concentration dependences of the charge carrier mobility in PbTe-MnTe solid solutions E. I. RogachevaI. M. Krivul’kin Electronic and Optical Properties of Semiconductors Pages: 966 - 970
Electron-plasmon interaction in acceptor-doped bismuth crystals N. P. StepanovV. M. Grabov Electronic and Optical Properties of Semiconductors Pages: 971 - 974
Study of zinc impurity atoms in GaP, GaAs, and GaSb 67Ga(67Zn) and 67Cu(67Zn) by emission Mössbauer spectroscopy N. P. SereginS. A. NemovS. M. Irkaev Electronic and Optical Properties of Semiconductors Pages: 975 - 976
Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition M. V. ChukichevB. M. AtaevI. I. Khodos Semiconductor Structures, Interfaces, and Surfaces Pages: 977 - 980
Experimental observation of splitting of the light and heavy hole bands in elastically strained GaAsN A. Yu. EgorovE. S. SemenovaC. Tu Semiconductor Structures, Interfaces, and Surfaces Pages: 981 - 984
Variations in the properties of an implantation-synthesized SixNy-Si heterosystem as a result of thermal and ion-beam treatments V. V. KarzanovK. A. MarkovE. S. Demidov Semiconductor Structures, Interfaces, and Surfaces Pages: 985 - 989
Optical storage on the basis of an n-InSb-SiO2-p-Si heterostructure Yu. A. Nikol’skii Semiconductor Structures, Interfaces, and Surfaces Pages: 990 - 992
Field-dependent photosensitivity of In-SiO2-Cd0.28Hg0.72Te metal-insulator-semiconductor structures with an opaque field electrode V. V. Vasil’evA. F. KravchenkoYu. P. Mashukov Semiconductor Structures, Interfaces, and Surfaces Pages: 993 - 996
Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures B. V. VolovikN. V. KryzhanovskayaV. M. Ustinov Semiconductor Structures, Interfaces, and Surfaces Pages: 997 - 1000
Charge carrier transport through the contact of metal with a superconducting semiconductor G. V. Kuznetsov Semiconductor Structures, Interfaces, and Surfaces Pages: 1001 - 1007
Adsorption and transformation of C60 molecules at the (100) Si surface N. R. GallE. V. Rut’kovA. Ya. Tontegode Semiconductor Structures, Interfaces, and Surfaces Pages: 1008 - 1012
Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures M. M. SobolevV. M. UstinovN. N. Ledentsov Low-Dimensional Systems Pages: 1013 - 1019
The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix D. S. SizovM. V. MaksimovZh. I. Alferov Low-Dimensional Systems Pages: 1020 - 1026
Photoluminescent and electronic properties of nanocrystalline silicon doped with gold É. B. KaganovichI. M. KizyakE. F. Venger Amorphous, Vitreous, and Porous Semiconductors Pages: 1027 - 1032
Strains and crystal lattice defects arising in macroporous silicon under oxidation E. V. AstrovaV. V. RatnikovI. L. Shul’pina Amorphous, Vitreous, and Porous Semiconductors Pages: 1033 - 1042
Hysteresis of the photonic band gap in VO2 photonic crystal in the semiconductor-metal phase transition V. G. GolubevD. A. KurdyukovR. Boeyink Amorphous, Vitreous, and Porous Semiconductors Pages: 1043 - 1047
Photoelectric phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al solar cells Yu. A. NikolaevV. Yu. Rud’A. Froitzheim Physics of Semiconductor Devices Pages: 1048 - 1052
Analysis of high-frequency response and nonlinear coherent generation of resonance-tunneling diodes within a broad frequency range with account of electron-electron interaction V. F. ElesinI. Yu. KateevA. I. Podlivaev Physics of Semiconductor Devices Pages: 1053 - 1057
Study of the potential distribution in a forward-biased silicon diode using electrostatic force microscopy A. V. AnkudinovA. N. TitkovV. A. Kozlov Physics of Semiconductor Devices Pages: 1058 - 1064
MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact P. V. BulaevV. A. KapitonovI. S. Tarasov Physics of Semiconductor Devices Pages: 1065 - 1069