Abstract
A metal-organic chemical vapor deposition (MOCVD) technique is developed for a diode laser heterostructure in a system of InGaAs/GaAs/AlGaAs solid solutions; the optimal sizes and the doping profile of the structure are determined to minimize the internal optical losses. Mesa-strip diode lasers with a threshold density of current J th=150–200 A/cm2, internal optical loss factor αi=1.6–1.9 cm−1, and an internal quantum yield ηi=85–95% were fabricated. In the continuous lasing mode of a diode laser with a 100-µm-wide aperture and a wavelength of 0.98 µm, the optical power output was as high as 6.5 W and was limited by the catastrophic optical degradation of mirrors. The radiation divergence in the plane normal to the p-n junction amounts to θ⊥. The use of wide-gap waveguide layers, which deepens the potential electron well in the active region, is shown to reduce the temperature sensitivity of the InGaAs/GaAs/AlGaAs laser heterostructures in the temperature range from 0 to 70°C.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 9, 2002, pp. 1144–1148.
Original Russian Text Copyright © 2002 by Bulaev, Kapitonov, Lutetski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Marmalyuk, Nikitin, Nikolaev, Padalitsa, Pikhtin, Bondarev, Zalevski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Tarasov.
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Bulaev, P.V., Kapitonov, V.A., Lutetskii, A.V. et al. MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact. Semiconductors 36, 1065–1069 (2002). https://doi.org/10.1134/1.1507292
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DOI: https://doi.org/10.1134/1.1507292