Oscillatory “reactions” involving the oxygen and carbon background impurities in silicon undergoing heat treatment V. V. Lukjanitsa Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 491 - 498
Thermal conductivity and the Wiedemann-Franz relation in melts of indium and gallium antimonides Ya. B. MagomedovA. R. Bilalov Electronic and Optical Properties of Semiconductors Pages: 499 - 501
Specific features of photoconductivity in thin n-PbTe:Ga epilayers B. A. AkimovV. A. BogoyavlenskiiV. N. Vasil’kov Electronic and Optical Properties of Semiconductors Pages: 502 - 505
Dynamic effect of a constant electric field on the kinetics of photons interacting with electrons in a semiconductor R. Kh. AmirovV. N. Gusyatnikov Electronic and Optical Properties of Semiconductors Pages: 506 - 511
Studies of the infrared luminescence of ZnSe doped with copper and oxygen N. K. MorozovaI. A. KaretnikovE. M. Gavrishchuk Electronic and Optical Properties of Semiconductors Pages: 512 - 515
On the origin of the luminescence band with hνm=1.5133 eV in gallium arsenide K. D. GlinchukN. M. LitovchenkoO. N. Stril’chuk Electronic and Optical Properties of Semiconductors Pages: 516 - 519
BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum O. V. NekrutkinaS. V. SorokinG. Landwehr Electronic and Optical Properties of Semiconductors Pages: 520 - 524
Method for determining the stoichiometric composition of a mercury cadmium telluride solid solution from capacitance-voltage characteristics I. M. IvankivA. M. YafyasovA. D. Perepelkin Semiconductor Structures, Interfaces, and Surfaces Pages: 525 - 528
Mechanism of the current flow in Pd-(heavily doped p-AlxGa1−x N) ohmic contact T. V. BlankYu. A. GoldbergA. E. Cherenkov Semiconductor Structures, Interfaces, and Surfaces Pages: 529 - 532
Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy V. A. OdnoblyudovA. R. KovshV. M. Ustinov Semiconductor Structures, Interfaces, and Surfaces Pages: 533 - 538
An analysis of the charge-transport mechanisms defining the reverse current-voltage characteristics of the metal-GaAs barriers S. V. BulyarskiiA. V. Zhukov Semiconductor Structures, Interfaces, and Surfaces Pages: 539 - 542
Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in a semiconductor/electrolyte system I. A. KarpovichA. P. GorshkovD. O. Filatov Low-Dimensional Systems Pages: 543 - 549
Manifestation of the upper Hubbard band in the electrical conductivity of two-dimensional p-GaAs-AlGaAs structures N. V. AgrinskayaYu. L. IvanovD. A. Poloskin Low-Dimensional Systems Pages: 550 - 553
Superlattice conductivity under the action of a nonlinear electromagnetic wave D. V. Zav’yalovS. V. Kryuchkov Low-Dimensional Systems Pages: 554 - 556
Nonlinear interaction of waves in a semiconductor superlattice A. A. BulgakovO. V. Shramkova Low-Dimensional Systems Pages: 557 - 564
The distribution function of hot charge carriers under conditions of resonance scattering A. A. Prokof’evM. A. OdnoblyudovI. N. Yassievich Low-Dimensional Systems Pages: 565 - 572
Electron transport in silicon carbide natural superlattices under the Wannier-Stark quantization conditions: Basic issues and application prospects V. I. SankinP. P. Shkrebii Low-Dimensional Systems Pages: 573 - 578
Silicon network in a-Si:H films containing ordered inclusions O. A. GolikovaE. V. BogdanovaO. V. Ostapenko Amorphous, Vitreous, and Porous Semiconductors Pages: 579 - 582
Excitation of luminescence in porous silicon with adsorbed ozone molecules S. N. KuznetsovV. B. PikulevV. A. Gurtov Amorphous, Vitreous, and Porous Semiconductors Pages: 583 - 587
Drift mobility of carriers in porous silicon N. S. AverkievL. P. KazakovaN. N. Smirnova Amorphous, Vitreous, and Porous Semiconductors Pages: 588 - 590
The effect of bombardment with carbon ions on the nanostructure of diamond-like films I. A. FaizrakhmanovV. V. BazarovI. B. Khaibullin Amorphous, Vitreous, and Porous Semiconductors Pages: 591 - 597
Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2) M. AidaralievN. V. ZotovaG. N. Talalakin Physics of Semiconductor Devices Pages: 598 - 604
A new structure of the CdS-based surface-barrier ultraviolet sensor S. Yu. PaveletsYu. N. BobrenkoT. E. Shengeliya Physics of Semiconductor Devices Pages: 605 - 607
Impact ionization wave breakdown of drift step recovery diodes V. A. KozlovA. F. Kardo-SysoevV. I. Brylevskii Physics of Semiconductor Devices Pages: 608 - 611
