1. The effect of various types of shallow impurities and their concentration on microhardness and photomechanical properties of semiconductors

   • A. B. Gerasimov
   • G. D. Chiradze

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 371 - 373

2. Laser beam epitaxy of HgCdTe/Si heterostructures

   • S. V. Plyatsko
   • N. N. Bergush

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 374 - 376

3. Emission from hot charge carriers during the formation of high-field autosolitons in electron-hole plasma in n-Ge

   • M. N. Vinoslavskii
   • A. V. Kravchenko

   Electronic and Optical Properties of Semiconductors Pages: 377 - 383

4. An analysis of the shape of a luminescence band induced by transitions of free electrons to carbon atoms in semi-insulating undoped GaAs crystals

   • K. D. Glinchuk
   • N. M. Litovchenko
   • O. N. Stril’chuk

   Electronic and Optical Properties of Semiconductors Pages: 384 - 390

5. Relaxation features of the dielectric response of Cd_1−x Zn_xTe crystals grown from the melt

   • I. A. Klimenko
   • V. K. Komar’
   • D. P. Nalivaiko

   Electronic and Optical Properties of Semiconductors Pages: 391 - 393

6. Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level

   • T. T. Mnatsakanov
   • L. I. Pomortseva
   • S. N. Yurkov

   Electronic and Optical Properties of Semiconductors Pages: 394 - 397

7. Dipole moments of ligands and stark splitting of levels of rare-earth ions

   • M. M. Chumachkova
   • A. B. Roitsin

   Electronic and Optical Properties of Semiconductors Pages: 398 - 404

8. Mechanisms of incorporation of an antimony impurity into cadmium telluride crystals

   • E. S. Nikonyuk
   • Z. I. Zakharuk
   • A. I. Rarenko

   Electronic and Optical Properties of Semiconductors Pages: 405 - 408

9. A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2\(\bar 1\bar 1\)] direction

   • G. B. Galiev
   • V. G. Mokerov
   • Yu. V. Khabarov

   Electronic and Optical Properties of Semiconductors Pages: 409 - 414

10. The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy

    • G. B. Galiev
    • V. É. Kaminskii
    • L. É. Velikhovskii

    Semiconductor Structures, Interfaces, and Surfaces Pages: 415 - 418

11. Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy

    • V. A. Solov’ev
    • I. V. Sedova
    • P. S. Kop’ev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 419 - 423

12. Interface states and capacitance-voltage characteristics of n-SnO₂:Ni/p-Si heterostructures under gas-adsorption conditions

    • R. B. Vasil’ev
    • A. M. Gas’kov
    • B. A. Akimov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 424 - 426

13. The transition layer in TiB₂-GaAs and Au-TiB₂-GaAs Schottky contacts

    • E. F. Venger
    • R. V. Konakova
    • V. N. Ivanov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 427 - 432

14. Hot-hole lateral transport in a two-dimensional GaAs/Al_0.3Ga_0.7As structure

    • Yu. L. Ivanov
    • I. V. Elizarov
    • A. E. Zhukov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 433 - 435

15. Conductance of quasi-two-dimensional semiconductor systems with electrostatic disorder in the region of the percolation metal-insulator transition

    • B. A. Aronzon
    • D. A. Bakaushin
    • N. K. Chumakov

    low-Dimensional Systems Pages: 436 - 443

16. Plasma oscillations in two-dimensional semiconductor superstructures in the presence of a high electric field

    • S. Yu. Glazov
    • S. V. Kryuchkov

    Low-Dimensional Systems Pages: 444 - 446

17. Magnetic-field-induced transitions between minibands in GaAs/Al_xGa_1−x As superlattices

    • V. F. Sapega
    • D. N. Mirlin
    • K. Eberl

    Low-Dimensional Systems Pages: 447 - 450

18. The effect of pulsed laser annealing on the parameters of Cd_xHg_1−x Te photoresistors

    • V. N. Ryzhkov
    • M. I. Ibragimova
    • N. S. Baryshev

    Physics of Semiconductors Devices Pages: 451 - 452

19. Photodiodes for a 1.5–4.8 µm spectral range based on type-II GaSb/InGaAsSb heterostructures

    • N. D. Stoyanov
    • M. P. Mikhailova
    • Yu. P. Yakovlev

    Physics of Semiconductors Devices Pages: 453 - 458

20. Photoelectric characteristics of infrared photodetectors with blocked hopping conduction

    • D. G. Esaev
    • S. P. Sinitsa

    Physics of Semiconductors Devices Pages: 459 - 463

21. Suppression of current by light in p-Si-n ⁺-ZnO-n-ZnO-Pd diode structures

    • S. V. Slobodchikov
    • Kh. M. Salikhov
    • Yu. G. Malinin

    Physics of Semiconductors Devices Pages: 464 - 467

22. A study of deep traps at the SiO₂/6H-SiC interface relying upon the nonequilibrium field effect

    • P. A. Ivanov
    • T. P. Samsonova
    • D. Yu. Polyakov

    Physics of Semiconductors Devices Pages: 468 - 473

23. Consideration of the “island” background charge in single-electron transistor simulation

    • I. I. Abramov
    • E. G. Novik

    Physics of Semiconductors Devices Pages: 474 - 476

24. The effect of dislocations formed during growth on the structure and photoluminescence of i-n ⁻-n-n ⁺-GaAs epilayers and on the related microwave transistors parameters

    • M. P. Lisitsa
    • F. V. Motsnyi
    • I. V. Prokopenko

    Physics of Semiconductors Devices Pages: 477 - 480

25. Radiation hardness of SiC ion detectors under relativistic protons

    • A. M. Ivanov
    • N. B. Strokan
    • E. M. Ivanov

    Physics of Semiconductors Devices Pages: 481 - 484

26. The thermal cross-interference effects in the arrays of vertical-cavity surface-emitting lasers

    • S. M. Zakharov

    Physics of Semiconductors Devices Pages: 485 - 489