Electrical and optical properties of pristine and polymerized fullerenes T. L. Makarova Reviews Pages: 243 - 278
Heteroepitaxy of II-VI compound semiconductors on cooled substrates A. P. BelyaevV. P. Rubets Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 279 - 282
Molecular-dynamics simulation of structural properties of Ge1−x Snx substitutional solid solutions V. G. DeibukYu. G. Korolyuk Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 283 - 286
Low-temperature diffusion of indium into germanium assisted by atomic hydrogen V. M. Matyushin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 287 - 290
A new magnetic semiconductor Cd1−x MnxGeP2 G. A. MedvedkinT. IshibashiK. Sato Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 291 - 294
Temperature dependence of a magnetoresistance effect in the films of ferromagnetic semiconductors based on oxides of rare-earth elements V. F. KabanovS. A. KarasevYa. G. Fedorenko Electronic and Optical Properties of Semiconductors Pages: 295 - 297
Specific features of the nonequilibrium distribution function for electron scattering by polar optical phonons in III-V semiconductors S. I. Borisenko Electronic and Optical Properties of Semiconductors Pages: 298 - 301
On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta M. S. YunusovM. KarimovM. A. Dzhalelov Electronic and Optical Properties of Semiconductors Pages: 302 - 305
Generation-recombination processes in semiconductors I. N. VolovichevYu. G. Gurevich Electronic and Optical Properties of Semiconductors Pages: 306 - 315
Capacitance-voltage characteristics of p-n structures based on (111)Si doped with erbium and oxygen A. M. Emel’yanovN. A. SobolevA. N. Yakimenko Electronic and Optical Properties of Semiconductors Pages: 316 - 320
Negative luminescence in p-InAsSbP/n-InAs diodes M. AidaralievN. V. ZotovaG. N. Talalakin Semiconductor Structures, Interfaces, and Surfaces Pages: 321 - 324
Characterization of electroluminescent structures based on gallium arsenide ion-implanted with ytterbium and oxygen D. W. PalmerV. A. DravinA. A. Gippius Semiconductor Structures, Interfaces, and Surfaces Pages: 325 - 330
Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties T. I. VoroninaB. E. ZhurtanovYu. P. Yakovlev Semiconductor Structures, Interfaces, and Surfaces Pages: 331 - 337
Extension of the frequency range of the noise spectral density in silicon p-n structures irradiated with gamma-ray quanta O. K. BaranovskiiP. V. KuchinskiiE. D. Savenok Semiconductor Structures, Interfaces, and Surfaces Pages: 338 - 342
Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing L. V. AsryanR. A. Suris Low-Dimensional Systems Pages: 343 - 346
Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs I. P. SoshnikovO. M. GorbenkoN. N. Ledentsov Low-Dimensional Systems Pages: 347 - 352
Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing I. A. KurovaN. N. OrmontA. S. Gudovskikh Amorphous, Vitreous, and Porous Semiconductors Pages: 353 - 356
Optically pumped mid-infrared InGaAs(Sb) LEDs N. V. ZotovaS. A. KarandashevV. V. Shustov Physics of Semiconductor Devices Pages: 357 - 359
Current-tunable lasers with a narrow emission line operating at 3.3 µm A. N. ImenkovN. M. KolchanovaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 360 - 364
Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers D. A. LivshitsA. Yu. EgorovI. S. Tarasov Physics of Semiconductor Devices Pages: 365 - 369