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Temperature dependence of a magnetoresistance effect in the films of ferromagnetic semiconductors based on oxides of rare-earth elements

  • Electronic and Optical Properties of Semiconductors
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Abstract

A temperature dependence of a positive magnetoresistance effect for films of certain oxides of rare-earth elements (Gd, Eu, and a Eu-Sm solid solution) close to the Curie temperature was considered and analyzed. It was demonstrated that the temperature dependence of the effect and the effect sign and magnitude are determined by the dependence of a magnetic moment for a magnetic cluster on both an external magnetic field strength and film parameters. These are the spin of the magnetic ion, exchange energy, defect density, etc.

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References

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Authors and Affiliations

  1. Saratov State University, Universitetskaya ul. 42, Saratov, 410026, Russia

    V. F. Kabanov, S. A. Karasev & Ya. G. Fedorenko

Authors
  1. V. F. Kabanov
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  2. S. A. Karasev
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  3. Ya. G. Fedorenko
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 3, 2001, pp. 310–312.

Original Russian Text Copyright © 2001 by Kabanov, Karasev, Fedorenko.

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Kabanov, V.F., Karasev, S.A. & Fedorenko, Y.G. Temperature dependence of a magnetoresistance effect in the films of ferromagnetic semiconductors based on oxides of rare-earth elements. Semiconductors 35, 295–297 (2001). https://doi.org/10.1134/1.1356150

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  • DOI: https://doi.org/10.1134/1.1356150

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