1. Kinetics of the accumulation of radiation defects during the high-dose electron irradiation of Pb_1−x Sn_xSe alloys

   • E. P. Skipetrov
   • B. B. Kovalev
   • E. A. Zvereva

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1257 - 1260

2. Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

   • V. V. Artamanov
   • M. Ya. Valakh
   • V. A. Yukhimchuk

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1261 - 1265

3. Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon

   • O. V. Aleksandrov
   • Yu. A. Nikolaev
   • N. A. Sobolev

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1266 - 1269

4. Density-of-states anomaly and tunneling conductance of Au/p-GaAs_0.94Sb_0.06 contacts near the metal-insulator transition

   • T. Yu. Allen
   • Kh. G. Nazhmudinov
   • T. A. Polyanskaya

   Electronic and Optical Properties of Semiconductors Pages: 1270 - 1276

   

5. Kinetics of electric field screening in a space-charge region with a leakage channel and low-temperature conductance of surface channels in high-resistivity n-Si

   • N. I. Bochkareva
   • A. V. Klochkov

   Electronic and Optical Properties of Semiconductors Pages: 1277 - 1283

6. Macroscopic ion traps at the silicon-oxide interface

   • S. G. Dmitriev
   • Yu. V. Markin

   Semiconductor Structures, Interfaces and Surfaces Pages: 1284 - 1288

7. Manifestations of the deneutralization of mobile charges in SiO₂ in the spectroscopy of the silicon-oxide interface

   • S. G. Dmitriev
   • Yu. V. Markin

   Semiconductor Structures, Interfaces and Surfaces Pages: 1289 - 1292

8. Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF₄ plasma followed by low-temperature annealing

   • K. S. Zhuravlev
   • A. L. Sokolov
   • K. P. Mogil’nikov

   Low-Dimensional Systems Pages: 1293 - 1298

9. Weak localization and intersubband transitions in δ-doped GaAs

   • G. M. Min’kov
   • S. A. Negashev
   • V. L. Gurtovoi

   Low-Dimensional Systems Pages: 1299 - 1303

10. Quantum corrections to the conductivity of a two-dimensional system with antidots

    • M. M. Makhmudian
    • M. V. Éntin

    Low-Dimensional Systems Pages: 1304 - 1308

11. Transient processes in photocathodes at high laser intensities

    • B. I. Reznikov
    • A. V. Subashiev

    Physics of Semiconductor Devices Pages: 1309 - 1317

12. Features of the current-voltage characteristics of long semiconductor structures under ultrahigh-level double-injection conditions

    • N. M. Volodin
    • A. V. Khanova
    • L. L. Fedorenko

    Physics of Semiconductor Devices Pages: 1318 - 1322

13. Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

    • V. P. Evtikhiev
    • I. V. Kudryashov
    • Zh. I. Alferov

    Physics of Semiconductor Devices Pages: 1323 - 1327

14. Solomon Meerovich Ryvkin (On his 80th Birthday)

    Personalia Pages: 1328 - 1329

15. Erratum: Autosolitons in InSb in a magnetic field [Semiconductors 32, 625–628 (June 1988)]

    • I. K. Kamilov
    • A. A. Stepurenko
    • A. S. Kovalev

    Erratum Pages: 1330 - 1330