1. Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

   • N. N. Dymova
   • A. E. Kunitsyn
   • A. V. Markov

   Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 1217 - 1220

2. Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching

   • T. Ya. Gorbach
   • S. V. Svechnikov
   • A. Ferrari

   Electronic and Optical Properties of Semiconductors Pages: 1221 - 1224

3. Energy spectrum of oxygen-implanted lead telluride deduced from optical absorption data

   • A. N. Veis

   Electronic and Optical Properties of Semiconductors Pages: 1225 - 1227

4. Spectral, energy, and temporal characteristics of two-photon-excited fluorescence of ZnSe single crystal in the blue region of the spectrum

   • A. M. Agal’tsov
   • V. S. Gorelik
   • I. A. Rakhmatullaev

   Electronic and Optical Properties of Semiconductors Pages: 1228 - 1230

5. Photoconductivity of sulfur-doped silicon near 10.6 µm

   • Kh. B. Siyabekov
   • V. T. Tulanov

   Electronic and Optical Properties of Semiconductors Pages: 1231 - 1233

6. Effect of different types of surface treatment on the photoelectric and optical properties of CdTe

   • A. Baidullaeva
   • A. I. Vlasenko
   • P. E. Mozol’

   Semiconductors Structures, Interfaces, and Surfaces Pages: 1234 - 1236

7. Properties of p-PbTe (Ga) based diode structures

   • B. A. Akimov
   • E. V. Bogdanov
   • V. I. Shtanov

   Semiconductors Structures, Interfaces, and Surfaces Pages: 1237 - 1240

8. Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma

   • K. S. Zhuravlev
   • V. A. Kolosanov
   • M. Holland

   Low-Dimensional Systems Pages: 1241 - 1243

9. Photoluminescence of localized exitons in coherently strained ZnS-ZnSe/GaAs(001) quantum wells

   • V. V. Tishchenko
   • N. V. Bondar
   • A. V. Kovalenko

   Low-Dimensional Systems Pages: 1244 - 1246

10. Macroscopic, local, volume, charge-carrier states in quasi-zero-dimensional structures

    • S. I. Pokutnii

    Low-Dimensional Systems Pages: 1247 - 1251

11. Metastability and relaxation processes in hydrogenated amorphous silicon

    • B. G. Budaguan
    • A. A. Aivazov
    • A. A. Popov

    Amorphous, Glassy, and Porous Semiconductors Pages: 1252 - 1256

12. Light-induced processes in a-Si:H films at elevated temperatures

    • I. A. Kurova
    • É. V. Larina
    • D. V. Senashenko

    Amorphous, Glassy, and Porous Semiconductors Pages: 1257 - 1260

13. Manifestation of percolation conductivity of short-channel field-effect transistors in the spectrum of shallow interface states

    • B. A. Aronzon
    • D. A. Bakaushin
    • V. E. Sizov

    The Physics of Semiconductor Devices Pages: 1261 - 1267

14. Kinetics of ion depolarization of Si-MOS structures in the linear voltage sweep regime

    • A. G. Zhdan
    • E. I. Goldman
    • G. V. Chucheva

    The Physics of Semiconductor Devices Pages: 1268 - 1272

15. Characteristics of a far-infrared germanium hot-hole laser in the Voigt and Faraday field configurations

    • L. E. Vorob’ev
    • S. N. Danilov
    • V. N. Tulupenko

    The Physics of Semiconductor Devices Pages: 1273 - 1279

16. Amplification of radiation in the far infrared range by hot holes in germanium in crossed electric and magnetic fields

    • L. E. Vorob’ev
    • S. N. Danilov
    • V. N. Tulupenko

    The Physics of Semiconductor Devices Pages: 1280 - 1283