1. First principles calculations of structure parameters and transition pressures of GaN_{1 − x} Bi _x alloys

   • R. Alaya
   • M. Mbarki
   • A. Rebey

   Electronic Properties of Semiconductors 04 March 2015 Pages: 279 - 284

2. Analysis of the photocurrent relaxation in semi-insulating GaAs in the temperature range of 150–200 K

   • A. P. Odrinsky

   Electronic Properties of Semiconductors 04 March 2015 Pages: 285 - 289

3. Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped

   • V. A. Romaka
   • P. Rogl
   • T. M. Kovbasyuk

   Electronic Properties of Semiconductors 04 March 2015 Pages: 290 - 297

4. Positronics of radiation-induced effects in chalcogenide glassy semiconductors

   • O. Shpotyuk
   • S. A. Kozyukhin
   • R. Szatanik

   Spectroscopy, Interaction with Radiation 04 March 2015 Pages: 298 - 304

5. Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature

   • A. O. Zakhar’in
   • A. V. Bobylev
   • A. V. Andrianov

   Spectroscopy, Interaction with Radiation 04 March 2015 Pages: 305 - 308

6. Investigation of surface potential in the V-defect region of MBE Cd _x Hg_{1 − x} Te film

   • V. A. Novikov
   • D. V. Grigoryev

   Surfaces, Interfaces, and Thin Films 04 March 2015 Pages: 309 - 312

7. Optical properties of alloys based on II-S and II-Te chalcogenides

   • I. A. Kirovskaya
   • P. E. Nor
   • E. O. Karpova

   Surfaces, Interfaces, and Thin Films 04 March 2015 Pages: 313 - 318

8. On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystals

   • R. K. Yafarov

   Surfaces, Interfaces, and Thin Films 04 March 2015 Pages: 319 - 324

9. Effect of water and a biologically active medium on different modifications of silicon

   • D. I. Bilenko
   • O. Ya. Belobrovaya
   • D. V. Terin

   Surfaces, Interfaces, and Thin Films 04 March 2015 Pages: 325 - 330

10. Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

    • S. V. Sorokin
    • S. V. Gronin
    • S. V. Ivanov

    Surfaces, Interfaces, and Thin Films 04 March 2015 Pages: 331 - 336

11. Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate

    • M. V. Lovygin
    • N. I. Borgardt
    • M. Seibt

    Surfaces, Interfaces, and Thin Films 04 March 2015 Pages: 337 - 344

12. Photoelectric characteristics of metal-Ga₂O₃-GaAs structures

    • V. M. Kalygina
    • V. V. Vishnikina
    • T. M. Yaskevich

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 04 March 2015 Pages: 345 - 351

13. Optical studies of carriers’ vertical transport in the alternately-strained ZnS_0.4Se_0.6/CdSe superlattice

    • E. A. Evropeytsev
    • S. V. Sorokin
    • A. A. Toropov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 04 March 2015 Pages: 352 - 357

14. Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons

    • N. V. Baidus
    • O. V. Vikhrova
    • A. N. Trufanov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 04 March 2015 Pages: 358 - 363

15. Electrical properties of Pd-oxide-InP structures

    • E. A. Grebenshchikova
    • V. V. Evstropov
    • Yu. P. Yakovlev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 04 March 2015 Pages: 364 - 366

16. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy

    • K. D. Mynbaev
    • A. V. Shilyaev
    • S. A. Dvoretsky

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 04 March 2015 Pages: 367 - 372

17. Optical and structural properties of ensembles of colloidal Ag₂S quantum dots in gelatin

    • O. V. Ovchinnikov
    • M. S. Smirnov
    • N. V. Korolev

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 04 March 2015 Pages: 373 - 379

18. Photoluminescence kinetics in CdS nanoclusters formed by the Langmuir-Blodgett technique

    • A. A. Zarubanov
    • K. S. Zhuravlev

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 04 March 2015 Pages: 380 - 386

19. Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium

    • D. O. Filatov
    • A. P. Gorshkov
    • V. G. Shengurov

    Physics of Semiconductor Devices 04 March 2015 Pages: 387 - 393

20. Effect of nanoscale tin-dioxide layers on the efficiency of CdS/CdTe-based film solar elements

    • G. S. Khrypunov
    • O. V. Pirohov
    • N. A. Kovtun

    Physics of Semiconductor Devices 04 March 2015 Pages: 394 - 400

21. Response of semiconductor nonlinear circuits to external perturbations

    • K. M. Aliev
    • I. K. Kamilov
    • N. S. Abakarova

    Physics of Semiconductor Devices 04 March 2015 Pages: 401 - 405

22. Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions

    • N. A. Sobolev
    • D. V. Danilov
    • I. N. Trapeznikova

    Physics of Semiconductor Devices 04 March 2015 Pages: 406 - 408

23. Formation of Si nanocrystals in multilayered nanoperiodic Al₂O₃/SiO _x /Al₂O₃/SiO _x /.../Si(100) structures: Synchrotron and photoluminescence data

    • S. Yu. Turishchev
    • V. A. Terekhov
    • E. P. Domashevskaya

    Fabrication, Treatment, and Testing of Materials and Structures 04 March 2015 Pages: 409 - 413

24. Electrooptical properties and structural features of amorphous ITO

    • L. P. Amosova

    Fabrication, Treatment, and Testing of Materials and Structures 04 March 2015 Pages: 414 - 418

25. Erratum to: “Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy”

    • P. E. Teterin
    • D. V. Averyanov
    • V. G. Storchak

    Erratum 04 March 2015 Pages: 419 - 419