Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate
A thin Al layer grown by molecular-beam epitaxy on a misoriented GaAs (100) substrate is studied by transmission electron microscopy. Electron diffraction data and bright-field, dark-field, and high-resolution images show that, in the layer, there are Al grains of three types of crystallographic orientation: Al (100), Al (110), and Al (110)R. The specific structural features of the interfaces between the differently oriented grains and substrate are studied by digital processing of the high-resolution images. From quantitative analysis of the dark-field images, the relative content and sizes of the differently oriented grains are determined. It is found that atomic steps at the substrate surface cause an increase in the fraction and sizes of Al (110)R grains and a decrease in the fraction of Al (100) grains, compared to the corresponding fractions and sizes in the layer grown on a singular substrate surface.
KeywordsGaAs Interplanar Spacing Dark Field Image Misfit Dislocation Atomic Plane
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- 3.J. P. Reithmaier, in Nanostructured Materials for Advanced Technological Applications, Ed. by J. P. Reithmaier, P. Petkov, W. Kulisch, and C. Popov (Springer, Dordrecht, 2008), p. 447.Google Scholar
- 7.Z. Liliental-Weber, E. R. Weber, and N. Newman, in Contacts to Semiconductors: Fundamentals and Technology, Ed. by L. J. Brillson (Noyes Publications, Park Ridge, 1993), p. 416.Google Scholar
- 16.Y. Sun, K. Li, J. Dong, X. Zeng, S. Yu, Y. Zhao, C. Zhao, and H. Yang, J. Mater. Sci.: Mater. Electron. 25, 581 (2014).Google Scholar
- 19.A. Rosenauer, Transmission Electron Microscopy of Semiconductor Nanostructures: Analysis of Composition and Strain State (Springer Berlin, Heidelberg, 2003).Google Scholar
- 20.L. M. Sorokin, L. P. Efimenko, A. E. Kalmykov, and Yu. I. Smolin, Phys. Solid State 46, 893 (2004).Google Scholar
- 23.Electron Microscopy of Thin Crystals, Ed. by P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, and M. J. Whelan (Plenum, New York, 1965; Mir, Moscow, 1968), ch. 15, p. 363.Google Scholar
- 24.R. C. Gonzalez and R. E. Woods, Digital Image Processing (Prentice Hall, 2007; Tekhnosfera, Moscow, 2005), p. 756.Google Scholar