1. Structural disordering and viedemann-franz relation in melts of some II-IV-V₂ semiconductors

   • Ya. B. Magomedov
   • M. A. Aidamirov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 367 - 369

2. Effect of crystallization of amorphous vanadium dioxide films on the parameters of a semiconductor-metal phase transition

   • V. A. Klimov
   • I. O. Timofeeva
   • F. Silva-Andrade

   Electronic and Optical Properties of Semiconductors Pages: 370 - 374

3. Recombination current instability in epitaxial p ⁺-n structures with impurity atoms locally incorporated into the n-type region and determination of the deep center parameters

   • B. S. Muravskii
   • O. N. Kulikov
   • V. N. Chernyi

   Electronic and Optical Properties of Semiconductors Pages: 375 - 379

4. Optical reflection in (Pb_0.78Sn_0.22)_1−x In_xTe solid solutions with a high indium content

   • A. N. Veis
   • A. V. Nashchekin

   Electronic and Optical Properties of Semiconductors Pages: 380 - 383

5. Effect of lattice deformation on semiconducting properties of CrSi₂

   • A. V. Krivosheeva
   • V. L. Shaposhnikov
   • V. E. Borisenko

   Electronic and Optical Properties of Semiconductors Pages: 384 - 389

6. Electrical properties of InAs irradiated with protons

   • V. N. Brudnyi
   • N. G. Kolin
   • A. I. Potapov

   Electronic and Optical Properties of Semiconductors Pages: 390 - 395

7. Influence of pulsed laser radiation on the morphology and photoelectric properties of InSb crystals

   • V. A. Gnatyuk
   • O. S. Gorodnychenko

   Electronic and Optical Properties of Semiconductors Pages: 396 - 398

8. IR birefringence in artificial crystal fabricated by anisotropic etching of silicon

   • E. V. Astrova
   • T. S. Perova
   • A. Moore

   Electronic and Optical Properties of Semiconductors Pages: 399 - 403

9. Energy levels of vacancies and interstitial atoms in the band gap of silicon

   • V. V. Lukjanitsa

   Electronic and Optical Properties of Semiconductors Pages: 404 - 413

10. Photosensitive structures based on ZnIn₂Se₄ single crystals

    • A. A. Vaipolin
    • Yu. A. Nikolaev
    • E. I. Terukov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 414 - 416

11. Special features of electron scattering at Al_xGa_1−x As/AlAs(001) interfaces

    • S. N. Grinyaev
    • G. F. Karavaev
    • V. N. Chernyshov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 417 - 425

12. The charge accumulation in an insulator and the states at interfaces of silicon-on-insulator structures as a result of irradiation with electrons and gamma-ray photons

    • D. V. Nikolaev
    • I. V. Antonova
    • S. A. Smagulova

    Semiconductor Structures, Interfaces, and Surfaces Pages: 426 - 432

13. The effect of internal fields on tunneling current in strained GaN/Al_xGa_1−x N(0001) structures

    • S. N. Grinyaev
    • A. N. Razzhuvalov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 433 - 438

14. Characteristics of gallium arsenide structures and Gunn devices based on them fabricated using the radiation-thermal technology

    • M. V. Ardyshev
    • V. M. Ardyshev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 439 - 442

15. The influence of carbon on the properties of Si/SiGe heterostructures

    • M. Ya. Valakh
    • V. N. Dzhagan
    • V. A. Yukhimchuk

    Semiconductor Structures, Interfaces, and Surfaces Pages: 443 - 447

16. Effect of irradiation with low-energy Ar ions on the characteristics of the working and rear sides of single-crystal GaAs substrate

    • A. S. Alalykin
    • P. N. Krylov
    • A. B. Fedotov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 448 - 451

17. Generation-recombination centers in CdTe:V

    • L. A. Kosyachenko
    • S. Yu. Paranchich
    • V. V. Motushchuk

    Semiconductor Structures, Interfaces, and Surfaces Pages: 452 - 455

18. Special features of formation and characteristics of Ni/21R-SiC Schottky diodes

    • V. L. Litvinov
    • K. D. Demakov
    • V. V. Milenin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 456 - 461

19. Properties of Ge nanocrystals formed by implantation of Ge⁺ ions into SiO₂ films with subsequent annealing under hydrostatic pressure

    • I. E. Tyschenko
    • A. B. Talochkin
    • W. Skorupa

    Low-Dimensional Systems Pages: 462 - 467

20. Laser ultrasonic study of porous silicon layers

    • S. M. Zharkii
    • A. A. Karabutov
    • V. Yu. Timoshenko

    Amorphous, Vitreous, and Porous Semiconductors Pages: 468 - 472

21. Raman spectroscopy of amorphous carbon modified with iron

    • S. G. Yastrebov
    • V. I. Ivanov-Omskii
    • C. Morosanu

    Amorphous, Vitreous, and Porous Semiconductors Pages: 473 - 476

22. Electrolytic fabrication of porous silicon with the use of internal current source

    • D. N. Goryachev
    • L. V. Belyakov
    • O. M. Sreseli

    Amorphous, Vitreous, and Porous Semiconductors Pages: 477 - 481

23. 3C-SiC p-n structures grown by sublimation on 6H-SiC substrates

    • A. A. Lebedev
    • A. M. Strel’chuk
    • N. K. Poletaev

    Physics of Semiconductor Devices Pages: 482 - 484

24. Current and temperature tuning of quantum-well lasers operating in 2.0-to 2.4-µm range

    • A. P. Astakhova
    • A. N. Baranov
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices Pages: 485 - 490

25. Vladimir Ivanovich Ivanov-Omski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) (dedicated to his 70th birthday)

    • Colleagues and friends, Editorial Board of the journal Fizika i tekhnika poluprovodnikov

    Personalia Pages: 491 - 492