1. Temperature dependence of the band structure of 3C, 2H, 4H, and 6H SiC polytypes

   • S. M. Zubkova
   • L. N. Rusina
   • E. V. Smelyanskaya

   Electronic and Optical Properties of Semiconductors Pages: 239 - 248

2. Fine Structure of the long-wavelength edge of exciton-phonon absorption and hyperbolic excitons in silicon carbide of 6H polytype

   • A. P. Krokhmal’

   Electronic and Optical Properties of Semiconductors Pages: 249 - 255

3. Effect of gadolinium impurity on transmittance and reflectance of Hg₃In₂Te₆ crystals

   • P. M. Gorlei
   • O. G. Grushka
   • Z. M. Grushka

   Electronic and Optical Properties of Semiconductors Pages: 256 - 258

4. Photoelectric properties of ZnO films doped with Cu and Ag acceptor impurities

   • A. N. Gruzintsev
   • V. T. Volkov
   • E. E. Yakimov

   Electronic and Optical Properties of Semiconductors Pages: 259 - 262

5. Arrangement of arsenic atoms in the PbTe lattice

   • S. A. Nemov
   • P. P. Seregin
   • N. P. Seregin

   Electronic and Optical Properties of Semiconductors Pages: 263 - 265

6. Polyamidine supramolecular structures—a new class of photosensitive polymeric semiconductors

   • E. L. Aleksandrova
   • M. M. Dudkina
   • A. V. Ten’kovtsev

   Electronic and Optical Properties of Semiconductors Pages: 266 - 270

7. Thermal transport of charge and polarization of 1.2-eV luminescence broad band in uniaxially strained n-GaAs:Te

   • A. A. Gutkin
   • M. A. Reshchikov

   Electronic and Optical Properties of Semiconductors Pages: 271 - 275

8. Thermoelectric figure of merit in solid solutions with phonon scattering by off-center impurities

   • E. A. Gurieva
   • P. P. Konstantinov
   • M. I. Fedorov

   Electronic and Optical Properties of Semiconductors Pages: 276 - 282

9. Effect of annealing in Zn vapor and liquid Zn on photoluminescence of high-purity polycrystalline ZnTe

   • V. S. Bagaev
   • V. V. Zaitsev
   • E. E. Onishchenko

   Electronic and Optical Properties of Semiconductors Pages: 283 - 287

10. The role of tin in reactions involving carbon interstitial atoms in irradiated silicon

    • L. I. Khirunenko
    • O. A. Kobzar’
    • N. A. Tripachko

    Electronic and Optical Properties of Semiconductors Pages: 288 - 293

11. Layer structure of Zn_1−x Cd_xSe films grown by vapor-phase epitaxy from metal-organic compounds on Cd_0.92Zn_0.08S(0001) substrates

    • V. P. Martovitsky
    • V. I. Kozlovsky
    • G. G. Yakushcheva

    Semiconductor Structures, Interfaces, and Surfaces Pages: 294 - 301

12. Properties of shallow-level D ⁻-centers in polar semiconductors

    • N. I. Kashirina
    • V. D. Lakhno
    • M. K. Sheinkman

    Electronic and Optical Properties of Semiconductors Pages: 302 - 306

13. On the modification of a silicon surface studied by scanning tunneling microscopy

    • V. M. Kornilov
    • A. N. Lachinov

    Semiconductor Structure, Interfaces, and Surfaces Pages: 307 - 311

14. Phonon spectra of (GaAs)_n(Ga_1−x Al_xAs)_m superlattices according to the Keating model

    • E. N. Prykina
    • Yu. I. Polygalov
    • A. V. Kopytov

    Low-Dimensional Systems Pages: 312 - 313

15. Luminescence from ZnO quantum dots deposited with synthetic opal

    • A. N. Gruzintsev
    • V. T. Volkov
    • E. E. Yakimov

    Low-Dimensional Systems Pages: 314 - 316

16. Structure of energy quantum levels in a quantum dot shaped as an oblate body of revolution

    • G. G. Zegrya
    • O. V. Konstantinov
    • A. V. Matveentsev

    Low-Dimensional Systems Pages: 317 - 321

17. Investigation of the physical properties of semiconductor nanostructures using samples with laterally nonuniform layers: 1. Photoluminescence

    • Yu. V. Khabarov

    Low-Dimensional Systems Pages: 322 - 328

18. Conductivity of one-dimensional semiconductor with periodic potential

    • S. D. Beneslavskii
    • A. A. Elistratov
    • S. V. Shibkov

    Low-Dimensional Systems Pages: 329 - 335

19. Spectra of photoluminescence from silicon nanocrystals

    • É. B. Kaganovich
    • É. G. Manoilov
    • S. V. Svechnikov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 336 - 339

20. Kinetics of growth of surface amorphous layers under irradiation of silicon with low-energy light ions

    • A. I. Titov
    • A. Yu. Azarov
    • V. S. Belyakov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 340 - 346

21. Structure and optical properties of C₆₀ films on polymer substrates

    • Yu. F. Biryulin
    • V. N. Zgonnik
    • M. A. Yagovkina

    Amorphous, Vitreous, and Porous Semiconductors Pages: 347 - 353

22. Tunnel emission of electrons in photo-field detectors and in an auger transistor in very strong electric fields

    • V. D. Kalganov
    • N. V. Mileshkina
    • E. V. Ostroumova

    Physics of Semiconductor Devices Pages: 354 - 359

23. Charge transport in superlattices with low-strength barriers and the problem of a terahertz bloch oscillator

    • A. A. Andronov
    • I. M. Nefedov
    • A. V. Sosnin

    Physics of Semiconductor Devices Pages: 360 - 366