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Photoelectric properties of ZnO films doped with Cu and Ag acceptor impurities

  • Electronic and Optical Properties of Semiconductors
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Abstract

The influence exerted by doping with Cu and Ag acceptor impurities at a content of 1, 3, and 5 at. % on the luminescence and photoconductivity of zinc oxide films has been studied. Electron-beam evaporation in optimal modes has been used to obtain films with predominant luminescence in the UV spectral range. It has been shown that the incorporation of copper yields three types of point defects in ZnO: CuZn (3d 10), CuZn (3d 9), and Cui; and in silver, a single type: AgZn (3d 10). Precipitation of a silver oxide phase at the highest impurity concentration has been observed. Impurity incorporation leads to a pronounced increase in the resistance and photosensitivity of films.

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Authors and Affiliations

  1. Institute of Microelectronic Technology and Ultrahigh-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    A. N. Gruzintsev, V. T. Volkov & E. E. Yakimov

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  1. A. N. Gruzintsev
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  2. V. T. Volkov
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  3. E. E. Yakimov
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 3, 2003, pp. 275–278.

Original Russian Text Copyright © 2003 by Gruzintsev, Volkov, Yakimov.

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Gruzintsev, A.N., Volkov, V.T. & Yakimov, E.E. Photoelectric properties of ZnO films doped with Cu and Ag acceptor impurities. Semiconductors 37, 259–262 (2003). https://doi.org/10.1134/1.1561514

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  • DOI: https://doi.org/10.1134/1.1561514

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