1. Chalcogenide passivation of III–V semiconductor surfaces

   • V. N. Bessolov
   • M. V. Lebedev

   Review Pages: 1141 - 1156

2. Scanning electron microscopy of long-wavelength laser structures

   • V. A. Solov’ev
   • M. P. Mikhailova
   • Yu. P. Yakovlev

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1157 - 1161

3. Formation of Se₂ quasimolecules in selenium-doped silicon

   • A. A. Taskin
   • E. G. Tishkovskii

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 1162 - 1167

4. Experimental study of the transverse Ettingshausen-Nernst effect and thermoelectric power in the presence of a large temperature gradient

   • M. M. Gadzhialiev
   • V. A. Elizarov

   Electronic and Optical Properties of Semiconductors Pages: 1168 - 1169

5. Nonlinear waves of interacting charge carriers in semiconductors

   • V. E. Stepanov

   Electronic and Optical Properties of Semiconductors Pages: 1170 - 1172

6. The magnetoplasma effect in single crystals of antimony at T⩾80 K

   • A. A. Zaitsev
   • K. G. Ivanov
   • V. M. Grabov

   Electronic and Optical Properties of Semiconductors Pages: 1173 - 1174

7. Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers

   • V. G. Mokerov
   • G. B. Galiev
   • Yu. V. Khabarov

   Electronic and Optical Properties of Semiconductors Pages: 1175 - 1178

8. Effect of electron-phonon energy exchange on thermal wave propagation in semiconductors

   • Yu. G. Gurevich
   • G. González de la Cruz
   • M. N. Kasyanchuk

   Electronic and Optical Properties of Semiconductors Pages: 1179 - 1184

9. Nature of the donor action of Gd impurity in crystals of lead and tin telluride

   • D. M. Zayachuk
   • O. A. Dobryanskii

   Electronic and Optical Properties of Semiconductors Pages: 1185 - 1186

10. Effect of laser-induced defects on luminescence in InP crystals

    • F. B. Baimbetov
    • N. G. Dzhumamukhambetov

    Electronic and Optical Properties of Semiconductors Pages: 1187 - 1189

11. Study of the dynamical characteristics of an insulator-semiconductor interface

    • Y. G. Fedorenko
    • A. M. Sverdlova
    • A. Malinin

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1190 - 1195

12. Effect of hydrogenation on the properties of metal-GaAs Schottky barrier contacts

    • V. G. Bozhkov
    • V. A. Kagadei
    • N. A. Torkhov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1196 - 1200

13. Electrical characteristics of silicon-rare-earth fluoride layered switching structures

    • V. A. Rozhkov
    • M. B. Shalimova

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1201 - 1205

14. The spectrum of real-space indirect magnetoexcitons

    • N. E. Kaputkina
    • Yu. E. Lozovik

    Low-Dimensional Systems Pages: 1206 - 1213

15. Resonant tunneling dynamics of heterostructures based on semiconductors with two-valley spectra

    • G. F. Karavaev
    • A. A. Voronkov

    Low-Dimensional Systems Pages: 1214 - 1221

16. Effect of ion dose and annealing mode on photoluminescence from SiO₂ implanted with Si ions

    • G. A. Kachurin
    • A. F. Leier
    • R. A. Yankov

    Low-Dimensional Systems Pages: 1222 - 1228

17. Effect of size dispersion on the optical absorption of an ensemble of semiconductor quantum dots

    • M. I. Vasilevskii
    • E. I. Akinkina
    • E. V. Anda

    Low-Dimensional Systems Pages: 1229 - 1233

18. Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films

    • V. Kh. Kudoyarova
    • A. N. Kuznetsov
    • H. Kuehne

    Amorphous, Glassy, and Porous Semiconductors Pages: 1234 - 1238

19. Influence of the deposition and annealing conditions on the optical properties of amorphous silicon

    • A. I. Mashin
    • A. V. Ershov
    • D. A. Khokhlov

    Amorphous, Glassy, and Porous Semiconductors Pages: 1239 - 1241

20. Influence of internal mechanical stresses on the characteristics of GaAs light-emitting diodes

    • V. G. Sidorov
    • D. V. Sidorov
    • V. I. Sokolov

    Physics of Semiconductor Devices Pages: 1242 - 1247

21. Appearance of negative resistance in p-n junction structures in a microwave field

    • D. A. Usanov
    • A. V. Skripal’
    • N. V. Ugryumova

    Physics of Semiconductor Devices Pages: 1248 - 1250

22. In memory of Yuli\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Ivanovich Ukhanov

    Obituaries Pages: 1251 - 1252

23. In memory of Serge\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Ivanovich Radautsan

    Obituaries Pages: 1253 - 1254

24. Erratum: Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra [Semiconductors 32, 423–427 (April 1998)]

    • P. G. Eliseev
    • I. V. Akimova

    Erratum Pages: 1255 - 1255

25. Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)]

    • N. I. Katsavets
    • G. M. Laws
    • C. T. Foxon

    Erratum Pages: 1256 - 1256