1. Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers

   • E. N. Vigdorovich

   OriginalPaper 13 March 2019 Pages: 449 - 454

   

2. Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic Applications

   • V. D. Kravtsova
   • M. B. Umerzakova
   • D. V. Vertyanov

   OriginalPaper 13 March 2019 Pages: 455 - 459

   

3. Structural Strength and Temperature Condition of Multi-Chip Modules

   • A. I. Pogalov
   • G. A. Blinov
   • E. Yu. Chugunov

   OriginalPaper 13 March 2019 Pages: 460 - 464

   

4. An Integrated High-Capacitance Varicap Based on Porous Silicon

   • S. P. Timoshenkov
   • A. N. Boyko
   • R. M. Kalmykov

   OriginalPaper 13 March 2019 Pages: 465 - 467

   

5. Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors

   • D. S. Silkin
   • V. P. Paderov

   OriginalPaper 13 March 2019 Pages: 468 - 471

   

6. Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors

   • M. O. Hrapov
   • A. V. Gluhov
   • S. V. Kalinin

   OriginalPaper 13 March 2019 Pages: 472 - 478

   

7. Using a TCAD System to Develop a Manufacturing Route for Complimentary Bipolar Transistors as Part of OD Devices

   • A. V. Solov’ev
   • T. U. Krupkina
   • A. M. Lagun

   OriginalPaper 13 March 2019 Pages: 479 - 482

   

8. The Influence of the Dopant Concentration in a Silicon Film on the Magnetic Sensitivity of SOI Field-Effect Hall Sensors

   • M. A. Korolev
   • A. V. Kozlov
   • S. S. Devlikanova

   OriginalPaper 13 March 2019 Pages: 483 - 486

   

9. TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures

   • K. O. Petrosyants
   • D. A. Popov
   • D. V. Bykov

   OriginalPaper 13 March 2019 Pages: 487 - 493

   

10. Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure Effect

    • V. A. Sergeev
    • A. M. Hodakov

    OriginalPaper 13 March 2019 Pages: 494 - 497

    

11. Design Automation Technique of Silicon Bandgap Voltage Reference

    • V. G. Ivanov
    • V. V. Losev

    OriginalPaper 13 March 2019 Pages: 498 - 503

    

12. A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous Adders

    • A. A. Starykh
    • A. V. Kovalev

    OriginalPaper 13 March 2019 Pages: 504 - 509

    

13. Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched Capacitors

    • Yu. Yu. Razuvaev

    OriginalPaper 13 March 2019 Pages: 510 - 515

    

14. Solving the Problems of Routing Interconnects with a Resynthesis for Reconfigurable Systems on a Chip

    • S. V. Gavrilov
    • D. A. Zheleznikov
    • V. M. Khvatov

    OriginalPaper 13 March 2019 Pages: 516 - 521

    

15. Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic Circuits

    • D. A. Bulakh
    • G. G. Kazennov
    • A. V. Lapin

    OriginalPaper 13 March 2019 Pages: 522 - 525

    

16. Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators

    • V. V. Gruzdov
    • K. L. Enisherlova
    • S. A. Kapilin

    OriginalPaper 13 March 2019 Pages: 526 - 531

    

17. Influence of External Microwave Fields on the Characteristics of a Square-Pulse RC-Generator

    • D. A. Usanov
    • M. K. Merdanov
    • D. V. Ponomarev

    OriginalPaper 13 March 2019 Pages: 532 - 537