Russian Microelectronics (Mikroelektronika) covers the physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology, dry processing techniques, etching, doping, and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal presents papers addressing problems of molecular beam epitaxy and related processes, heterojunction devices and integrated circuits, the technology and devices of nanoelectronics, and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, includeng nanotransistors, and solid state realizations of qubits.
The journal is intended for specialists at research institutes, universities, and other educational establishments; for graduate students; and, to a certain extent, for those working at industrial laboratories.
G. A. Rudakov (March 2017)
Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate SOI CMOS nanotransistor
N. V. Masal’skii (March 2017)
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