Abstract
In contrast to traditional approach using Si nanotexture, we propose and investigate the light-trapping enhancement of ultrathin c-Si cells via the design of front nanostructured antireflective layer by using the finite-difference time-domain method, where four nanostructures of nanorod hole (NRH) arrays, nanosquare hole (NSH) arrays, inverted nanocone hole (INCH) arrays, and inverted nanopyramid hole (INPH) arrays are applied to silicon nitride for comparison. Via the simulations and optimizations, it is found that the solar cells with design of inverted nanocone hole arrays can produce the highest short-circuit photocurrent density of 29.46 mA/cm2 resulting in an enhancement of 29.32% compared with the control group (with 67 nm Si3N4). Furthermore, when the optimal cells are integrated with back silver, a photocurrent density of 32.20 mA/cm2 can be achieved, offering an additional benefit of 2.08 mA/cm2 compared with 30.12 mA/cm2 using back aluminum.
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Acknowledgments
This work was supported by National Natural Science Foundation of China (Grant No. U1765105) and 111 Project (D20015) of China. The present work was also partly supported by the Fundamental Research & Edge-cutting Discovery Project of Chongqing City, China (cstc2018 jcyjAX0209).
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43578_2020_95_MOESM1_ESM.tif
Electronic supplementary material 1 Figure. S1: The wavelength dependent refractive index (left) and the extinction coefficient (right) of the Si3N4 in the wavelength of 300-1100 nm. (TIF 3410 kb)
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Hu, D., Tan, X.Y., Sun, L. et al. Enhanced light absorption of ultrathin crystalline silicon solar cells via the design of front nanostructured silicon nitride. Journal of Materials Research 36, 668–676 (2021). https://doi.org/10.1557/s43578-020-00095-0
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DOI: https://doi.org/10.1557/s43578-020-00095-0