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Growth and properties of Ti-Cu films with respect to plasma parameters in dual-magnetron sputtering discharges

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  • Plasma Physics
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Abstract

Properties of different methods of magnetron sputtering (dc-MS, dual-MS and dual-HiPIMS) are studied and compared with respect to intermetallic Ti-Cu film formation. The quality and features of thin films are strongly influenced by the energy of incoming particles. The ion velocity distribution functions (IVDFs) were measured by time-resolved retarding field analyzer (RFA) in the substrate position. Thin films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffractometry (XRD) and X-ray reflectometry (XR). Properties and crystallography of Ti-Cu films are discussed as a function of ion energy which is affected by the mode of sputtering. It was found that IVDFs measured in pulsed discharges exhibit double-peak distribution. The IVDFs reach the maximum at ion energies about  ~8 eV. The ion saturated current is highest in dual-HiPIMS discharge (~5 μA/cm2) and is mostly represented by Cu+ and Ar+ ions. The mode of sputtering influences chemical composition and film formation. The copper forms polycrystalline fcc-phase while much smaller Ti particles enwraps the copper crystallites or are part of a solid solution.

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Authors and Affiliations

  1. Institut für Physik, Ernst-Moritz-Arndt-Universität Greifswald, Felix-Hausdorff-Str. 6, 17489, Greifswald, Germany

    V. Stranak, H. Wulff, R. Bogdanowicz, S. Drache & R. Hippler

  2. Institute of Physics v. v. i., Academy of Science of the Czech Republic, Na Slovance 2, 182 21, Prague, Czech Republic

    Z. Hubicka & M. Cada

  3. Faculty of Mathematics and Physics, Charles University in Prague, V Holešovičkách 2, 180 00, Prague, Czech Republic

    M. Tichy

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  1. V. Stranak
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  2. H. Wulff
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Stranak, V., Wulff, H., Bogdanowicz, R. et al. Growth and properties of Ti-Cu films with respect to plasma parameters in dual-magnetron sputtering discharges. Eur. Phys. J. D 64, 427–435 (2011). https://doi.org/10.1140/epjd/e2011-20393-7

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  • DOI: https://doi.org/10.1140/epjd/e2011-20393-7

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