Abstract
The secondary electron emission is a surface dependent phenomenon, more influenced by surface preparation than by the material itself. The present paper deals with the effect of the electrode surface conditions: clean (atomically clean) and contaminated electrodes (standard conditions even after mechanical and chemicals cleaning) on the characteristics of an asymmetric discharge by PIC/MCC simulations. In the arrangement with one clean and one contaminated electrode the discharge characteristics strongly depend upon which electrode is powered. The obtained PIC/MCC simulation results indicate that contamination of electrodes and variations of the secondary electron emission coefficients can lead to more or less significant changes in properties of rf plasmas.
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V.A. Godyak, R.B. Piejak, B.M. Alexandrovich, J. Appl. Phys. 69, 3455 (1991)
M.A. Lieberman, A.J. Lichtenberg, Principles of Plasmas Discharges and Material Processing (Wiley, New York, 1994)
T. Makabe, Z.Lj. Petrović, Advances in Low Temperature RF Plasmas (Elsevier, New York, 2002)
T. Makabe, Z.Lj. Petrović, Plasma Electronics: Applications in Microelectronic Device Fabrication (Taylor & Francis, 2006)
J.P. Molnar, Phys. Rev. 83, 940 (1951)
P.H. Mahadevan, J.K. Layton, D.B. Medvedev, Phys. Rev. 129, 79 (1963)
P.H. Mahadevan, G.D. Magnuson, J.K. Layton, C.E. Carlston, Phys. Rev. 140, A1407 (1965)
G. Holmen, B. Svensson, J. Schou, P. Sigmund, Phys. Rev. B 20, 2247 (1979)
A. Itoh, T. Majima, F. Obata, Y. Hamamoto, A. Yogo, Nucl. Instrum. Meth. B 192, 626 (2002)
A. Bogaerts, R. Gijbels, Plasma Sources Sci. Technol. 11, 27 (2002)
S. Kakuta, F. Tochikubo, Z.Lj. Petrović, T. Makabe, J. Appl. Phys. 74, 4923 (1993)
R. Krimke, H.M. Urbassek, J. Phys. D 29, 378 (1996)
D. Marić, K. Kutasi, G. Malović, Z. Donk, Z.Lj. Petrović, Eur. Phys. J. D 21, 73 (2002)
L. Jolivet, J.F. Roussel, IEEE Trans. Plasma Sci. 30, 318 (2001)
S.F. Biagi, D. Duxbury, E. Gabathuler, Nucl. Instrum. Meth. A 419, 438 (1998)
A. DiMauro, E. Nappi, F. Posa, A. Breskin, A. Ozulutskov, R. Chechik, S.F. Biagi, G. Paic, F. Piuz, Nucl. Instrum. Meth. A 371, 137 (1996)
V.Lj. Marković, S.R. Gocić, S.N. Stamenković, Z.Lj. Petrović, M. Radmilović, Eur. Phys. J. Appl. Phys. 4, 171 (2001)
D. Mariotti, J.A. McLaughlin, P. Maguire, Plasma Sources Sci. Technol. 13, 207 (2004)
M. Radmilović-Radjenović, J.K. Lee, Phys. Plasmas 15, (2005)
C. Punset, J.P. Boeuf, L.C. Pitchford, J. Appl. Phys. 83, 1884 (1998)
V.P. Nagorny, P.J. Drallos, W. Williamson, Jr, J. Appl. Phys. 77, 3645 (1995)
S.S. Yang, S.M. Lee, F. Iza, J.K. Lee, J. Phys. D: Appl. Phys. 39, 2775 (2006)
T.B. Frooninckx, J.J. Sojka, J. Geophys. Res. 97, 2985 (1992)
M. Radmilović-Radjenović, J.K. Lee, F. Iza, G.Y. Park, J. Phys. D 38, 950 (2005)
M. Radmilović-Radjenović, B. Radjenović, Plasma Sources Sci. Technol. 16, 337 (2007)
M. Radmilović-Radjenović, B. Radjenović, Contrib. Plasma Phys. 47, 165 (2007)
A. Qayyum, I. Mehmood, W. Ahmad, The Nucleus 41, 1 (2004)
E.V. Barnat, G.A. Hebener, J. Appl. Phys. 98, 013305 (2005)
A.V. Phelps, Z.Lj. Petrović, Plasma Sources Sci. Technol. 8, R21 (1999)
C.K. Birdsall, IEEE Trans. Plasma Sci. 19, 65 (11991)
J.P. Verboncoeur, M.V. Alves, V. Vahedi, C.K. Birdsall, J. Comput. Phys. 104, 321 (1993)
V. Vahedi, M. Surendra, Comput. Phys. Commun. 87, 179 (1995)
N.Yu Babaeva, J.K. Lee, J.W. Shon, J. Phys. D: Appl. Phys. 38, 287 (2005)
I.V. Schweigert, V.A. Schweigert, Plasma Sources Sci. Technol. 13, 315 (2004)
H.C. Kim, O. Manuilenko, J.K. Lee, Jpn J. Appl. Phys. 44, 1957 (2005)
E.J. Sternglass, Phys. Rev. 108, 1 (1957)
J.P. Boeuf, Phys. Rev. A 36, 2782 (1987)
M. Soji, M. Sato, J. Phys. D: Appl. Phys. 32, 1640 (1999)
H.B. Smith et al., Phys. Plasmas 10, 875 (2003)
A.V. Phelps, L.C. Pitchford, C. Pedoussat, Z. Donko, Plasma. Sources Sci. Technol. 8, B1 (1999)
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Radmilović-Radjenović, M., Petrović, Z. Influence of the surface conditions on rf plasma characteristics. Eur. Phys. J. D 54, 445–449 (2009). https://doi.org/10.1140/epjd/e2009-00004-2
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DOI: https://doi.org/10.1140/epjd/e2009-00004-2