Abstract
We study the resistive state of a mesoscopic superconducting strip with an engineered defect at the center. The defect is another superconductor with a different critical temperature. Several geometrical shapes of the defect are studied. The strip is considered under a transport electrical current, Ja, and at zero external applied magnetic field. The current is applied through a metallic contact, and the defect is simulated with the phenomenological parameter α(T) = α0(T − Tc(r)) in the Ginzburg-Landau free energy density. Here Tc(r) = Tc,0 + δT(r), where δT(r) < 0 (δT(r) > 0) corresponds to a domain of lower (higher) critical temperature. It is shown that the critical current density for the I–V characteristic curve, Jc1, at which the first vortex-antivortex (V-Av) pair nucleates in the sample, as well as its dynamics, strongly depend on the critical temperature, the position, and the geometry of the defect.
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Barba-Ortega, J., Joya, M.R. & Sardella, E. Resistive state of a thin superconducting strip with an engineered central defect. Eur. Phys. J. B 92, 143 (2019). https://doi.org/10.1140/epjb/e2019-100082-y
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DOI: https://doi.org/10.1140/epjb/e2019-100082-y