Abstract
Deterministic numerical methods developed for solving Boltzmann-Poisson systems of carriers and phonons are applied to determine the transport properties of sub-micron semiconductor devices and bulk graphene. Kinetic effects on the far-from-equilibrium electron transport in a silicon npn-structure are studied by comparing the solution of the Boltzmann equation with corresponding maximum entropy distributions, which serve as reference for a hydrodynamical description. An indium phosphide n+-n-n+ diode is considered to investigate the impact of nonequilibrium polar optical phonons on the electron transport. Remarkable transport properties due to the exotic band structure of graphene are investigated on a kinetic level. The numerical studies based on a direct determination of the distribution functions of electrons and phonons demonstrate the significant influence of nonequilibrium phonons on the carrier transport in sub-micron electronic building blocks.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Galler, Multigroup Equations for the Description of the Particle Transport in Semiconductors (World Scientific, Singapore, 2005)
M. Freitag, Nature Nanotech. 3, 455 (2008)
M. Galler, F. Schürrer, Comput. Methods Appl. Mech. Engrs. 194, 2806 (2005)
C. Ertler, F. Schürrer, J. Comput. Electron. 5, 15 (2006)
C. Jacoboni, P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer-Verlag, Wien, 1989)
P. Lugli, P. Bordone, L. Reggiani, M. Rieger, P. Kocevar, S.M. Goodnick, Phys. Rev. B 39, 7852 (1989)
J.A. Carrillo, I.M. Gamba, A. Majorana C.-W. Shu, J. Comp. Phys. 184, 498 (2003)
A. Domaingo, M. Galler, F. Schürrer, Compel. 24, 1311 (2005)
M. Galler, A. Majorana, F. Schürrer, in Scientific Computing in Electrical Engineering, edited by A.M. Anile, G. Ali, G. Mascali (Springer-Verlag, Berlin, 2006)
A.M. Anile, V. Romano, Continuum Mech. Thermodyn. 11, 307 (1999)
V. Romano, Continuum Mech. Thermodyn. 12, 31 (2000)
J.M. Ziman, Electrons and Phonons (Oxford University Press, London, 1960)
P.R. Wallace, Phys. Rev. 71, 622 (1947)
S. Selberherr, Analysis and Simulation of Semiconductor Devices (Springer, Wien, 1984)
M. Galler, F. Schürrer, J. Phys. A: Math. Gen. 34, 1479 (2004)
M. Lazzeri, S. Piscanec, F. Mauri, A.C. Ferrari, J. Robertson, Phys. Rev. Lett. 95, 236802 (2005)
A. Majorana, R.M. Pidatella, J. Comp. Phys. 174, 649 (2001)
C. Auer, F. Schürrer, W. Koller, SIAM J. Appl. Math. 64, 1457 (2004)
C.-W. Shu, S. Osher, J. Comp. Phys. 77, 439 (1988)
G. Jiang, C.-W. Shu, J. Comp. Phys. 126, 202 (1996)
J.C. Vaissiere, J.P. Nougier, L. Varani, P. Houlet, L. Hlou, L. Reggiani, P. Kocevar, Phys. Rev. B, 53, 9886 (1996)
E.H. Hwang, S. Das Sarma, Phys. Rev. B 77, 115449 (2008)
C. Auer, F. Schürrer, C. Ertler, Phys. Rev. B 74, 165409 (2006)
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science 306, 666 (2004)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Auer, C., Lichtenberger, P. & Schürrer, F. Kinetic effects on the transport properties of nanostructured devices investigated by deterministic solutions of the Boltzmann-Poisson system. Eur. Phys. J. B 70, 133–143 (2009). https://doi.org/10.1140/epjb/e2009-00158-7
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1140/epjb/e2009-00158-7