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Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer

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Abstract.

The temperature and voltage dependence of spin transport is theoretically investigated in a new type of magnetic tunnel junction, which consists of two ferromagnetic outer electrodes separated by a ferromagnetic barrier and a nonmagnetic (NM) metallic spacer. The effect of spin fluctuation in magnetic barrier, which plays an important role at finite temperature, is included by taking the mean-field approximation. It is found that, the tunnel magnetoresistance (TMR) and the electron-spin polarization depend strongly on the temperature and the applied voltage. The TMR and spin polarization at different temperatures show an oscillatory behavior as a function of the NM spacer thickness. Also, the amplitude of these oscillations is regularly reduced when the temperature increases. The maximum TMR value, varies approximately from 270\(\%\) in reverse bias (at T = 0 K) to 25\(\%\) in forward bias (at \(T\geq T_C\)).

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Authors and Affiliations

  1. Department of Physics, Sharif University of Technology, 11365-9161, Tehran, Iran

    A. A. Shokri

  2. Department of Physics, Tehran Payame Noor University, Fallahpour St., Nejatollahi St., Tehran, Iran

    A. Saffarzadeh

Authors
  1. A. A. Shokri
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  2. A. Saffarzadeh
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Correspondence to A. A. Shokri.

Additional information

Received: 25 June 2004, Published online: 14 December 2004

PACS:

72.25.Hg Electrical injection of spin polarized carriers - 73.23.Ad Ballistic transport - 73.40.Gk Tunneling

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Shokri, A.A., Saffarzadeh, A. Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer. Eur. Phys. J. B 42, 187–191 (2004). https://doi.org/10.1140/epjb/e2004-00371-x

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  • DOI: https://doi.org/10.1140/epjb/e2004-00371-x

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