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A Method for Calculating Operating Characteristics of Silicon Heterojunction Solar Cells with Arbitrary Parameters of Crystalline Substrates

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Abstract

Specific features of the current processes in silicon heterojunction with intrinsic thin layer solar cells have been investigated. The proposed model takes into account the ambipolar motion of carriers and allows one to calculate the operating characteristics at an arbitrary ratio of the diffusion length and the crystalline-substrate thickness. A numerical method for estimating the recombination-loss rate on silicon wafer surfaces based on the comparative analysis of the experimental values of short-circuit current and open-circuit voltage is described.

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Funding

This study was performed within a state order for basic research contract for the Ioffe Physical Technical Institute.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    I. E. Panaiotti

  2. St. Petersburg State Electrotechnical University “LETI”, 197376, St. Petersburg, Russia

    E. I. Terukov & I. S. Shakhrai

  3. Research and Development Center for Thin-Film Technologies in Energetics, Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    E. I. Terukov

  4. Hevel Group, 117342, Moscow, Russia

    I. S. Shakhrai

Authors
  1. I. E. Panaiotti
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  2. E. I. Terukov
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  3. I. S. Shakhrai
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Correspondence to I. E. Panaiotti.

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The authors declare that they have no conflict of interest.

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Translated by A. Sin’kov

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Panaiotti, I.E., Terukov, E.I. & Shakhrai, I.S. A Method for Calculating Operating Characteristics of Silicon Heterojunction Solar Cells with Arbitrary Parameters of Crystalline Substrates. Tech. Phys. Lett. 46, 835–837 (2020). https://doi.org/10.1134/S1063785020090072

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  • DOI: https://doi.org/10.1134/S1063785020090072

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