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A Study of the Effect of Radiation on Recombination Loss in Heterojunction Solar Cells Based on Single-Crystal Silicon

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Abstract

A method has been developed for numerically estimating the recombination loss in silicon heterojunction solar cells under irradiation. The calculations are based on an analysis of the experimental short-circuit currents. The suggested model makes it possible to evaluate the degree of degradation of semiconductor structures by calculating the decrease in the bulk lifetime and in the diffusion length of carriers. The results obtained are of practical importance for examining the possibility of using this type of solar cells in space conditions.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    I. E. Panaiotti

  2. St. Petersburg State Electrotechnical University LETI, 197022, St. Petersburg, Russia

    E. I. Terukov

  3. R&D Center for Thin Film Technologies in Energetics, Ioffe Physical Technical Institute, Russian Academy of Sciences, 194201, St. Petersburg, Russia

    E. I. Terukov

Authors
  1. I. E. Panaiotti
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  2. E. I. Terukov
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Correspondence to I. E. Panaiotti.

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Translated by M. Tagirdzhanov

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Panaiotti, I.E., Terukov, E.I. A Study of the Effect of Radiation on Recombination Loss in Heterojunction Solar Cells Based on Single-Crystal Silicon. Tech. Phys. Lett. 45, 193–196 (2019). https://doi.org/10.1134/S106378501903012X

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  • DOI: https://doi.org/10.1134/S106378501903012X

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