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Investigating the Formation of Defects in Silicon during Gamma Irradiation

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Abstract

The parameters of recombination centers in silicon photodiodes are studied before and after gamma irradiation. The technique of investigation is deep-level recombination spectroscopy. It is shown that, after irradiation, both the forward-bias and reverse-bias currents through the p–n junction increase, which is explained by the growth in the concentration of recombination centers due to the formation of vacancies during irradiation.

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Authors and Affiliations

  1. National Research University of Electronic Technology (Moscow Institute of Electronic Technology, MIET), 124498, Moscow, Russia

    M. A. Saurov

  2. Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, 119991, Moscow, Russia

    S. V. Bulyarskiy & A. V. Lakalin

Authors
  1. M. A. Saurov
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  2. S. V. Bulyarskiy
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  3. A. V. Lakalin
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Correspondence to S. V. Bulyarskiy.

Additional information

Translated by Z. Smirnova

Abbreviation: SCR—space charge region.

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Saurov, M.A., Bulyarskiy, S.V. & Lakalin, A.V. Investigating the Formation of Defects in Silicon during Gamma Irradiation. Russ Microelectron 49, 103–107 (2020). https://doi.org/10.1134/S1063739720010114

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  • DOI: https://doi.org/10.1134/S1063739720010114

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