Abstract
n-VO2/p-GaN based oxide-nitride heterojunctions were realized by growing high quality VO2 films with precisely controlled thickness on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). The high crystalline quality of the n-VO2/p-GaN heterojunctions were confirmed by X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The phase transition characteristics of the as-grown n-VO2/p-GaN heterojunctions were systematically investigated by temperature-dependent resistivity and infrared transmittance measurements. The results indicated that an excellent reversible metal-to-insulator (MIT) transition is observed with an abrupt change in both resistivity and infrared transmittance (IR) at 330 K, which was lower than the 341 K for bulk single crystal VO2. Remarkably, the resistivity-temperature curve was well consistent with that obtained from the temperature dependent IR transmittance. Meanwhile, the current-voltage characteristics originated from the n-VO2/p-GaN interface were demonstrated both before and after MIT of VO2 overlayer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements.
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Funded by the National Natural Science Foundation of China (No. 51872036), the Dalian Science and Technology innovation fund (No. 2018J12GX033), and the Fundamental Research Funds for the Central Universities (No. DUT19LAB07)
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Zhang, Y., Zhang, B., Wang, M. et al. Growth and Characteristics of n-VO2/p-GaN based Heterojunctions. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 35, 342–347 (2020). https://doi.org/10.1007/s11595-020-2262-0
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DOI: https://doi.org/10.1007/s11595-020-2262-0