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Annealing-induced modifications on structural, surface chemical bonding, and electrical characteristics of p-NiO/n-TiO2 heterostructure

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Abstract

The influences of annealing temperatures on the electrical characteristics of a p-NiO/n-TiO2 heterojunction diode were thoroughly investigated, taking into account changes in microstructure, morphology, and surface chemistry of the p-NiO/n-TiO2 films, which were deposited on an insulating SiO2/Si layer. During different annealing processes, considerable stress variations were observed in the p-NiO/n-TiO2 films due to the crystalline evolution of p-NiO and n-TiO2. Notably, the crystallization of the TiO2 layer, which serves as the intermediary between the back contact materials and NiO, led to the evident formation of grain structures. As the annealing temperature increased, the surface roughness also grew from 5.4 to 8.7 nm. At an annealing temperature of 500 °C, the formation of a parasitic NiTiOx phase was observed, particularly at the interface between NiO and TiO2. Conversely, the study also revealed that annealing temperature played a significant role in the rectifying behavior, barrier potential, and ideality factor of the diode. Among the various annealing processes, the most favorable results were achieved after annealing at 400 °C. At this temperature, the diode demonstrated the lowest ideality factor of 1.89, accompanied by superior rectifying behavior and a barrier potential of 0.70 eV. The findings clearly indicate that any alterations in the surface chemistry and microstructure of the film directly impact the diode's characteristics. Thus, optimizing the annealing temperature becomes crucial for enhancing the performance of the p-NiO/n-TiO2 heterojunction diode.

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Acknowledgements

The present study was partially supported by Presidency of the Republic of Turkey Presidency of Strategy and Budget (Contract Number: 2016K12-2834) and BAIBU under Contract Number: 2018.34.01.1395 and partially were supported by own budget of the authors.

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Authors and Affiliations

  1. Vocational School of Health Services, Bolu Abant Izzet Baysal University, Bolu, Turkey

    Senol Kaya

  2. Yenicaga Yasar Celik Vocational School Bolu Abant Izzet Baysal University, Bolu, Turkey

    Ugur Soykan

  3. Electrical Electronics Engineering Department, Bolu Abant Izzet Baysal University, Bolu, Turkey

    Mustafa Sunkar & Rıfkı Terzioğlu

  4. Chemistry Department, Bolu Abant Izzet Baysal University, Bolu, Turkey

    Seda Karaboğa

  5. Electronic and Automation Department, Bolu Abant Izzet Baysal University, Bolu, Turkey

    Muhsin U. Doğan

  6. Mechanical Engineering Department, Bolu Abant Izzet Baysal University, Bolu, Turkey

    Gurcan Yildirim

  7. Physics Department, Bolu Abant Izzet Baysal University, Bolu, Turkey

    Cabir Terzioğlu

  8. Center of Nuclear Radiation Detectors Research and Applications, BAİBU, Bolu, Turkey

    Senol Kaya, Ugur Soykan, Rıfkı Terzioğlu & Cabir Terzioğlu

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  1. Senol Kaya
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Kaya, S., Soykan, U., Sunkar, M. et al. Annealing-induced modifications on structural, surface chemical bonding, and electrical characteristics of p-NiO/n-TiO2 heterostructure. J Mater Sci: Mater Electron 34, 1725 (2023). https://doi.org/10.1007/s10854-023-11140-z

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