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Activated InN nanocolumns as sensitive halogen sensor

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Abstract

We herein present the development of sensitive halogen sensors based on InN nanocolumns (NCs) directly grown onto p-Si(111). Their activation with InN QDs then followed this growth by using plasma-assisted molecular beam epitaxy (PA-MBE). The activated NCs were then probed for their morphological, structural, optical, and electrical properties. Atomic force microscopy divulges the presence of the InN QDs on top of the NCs, which further confirm by deconvoluted two peaks in PL measurements. The XPS valance band measurements confirm the pinning to the conduction band with ∼ 0.15 eV, which manifests the presence of positively charged surface donor states. We further have utilized these surface donor states and investigated these activated NCs toward halogen ions. The results demonstrated the sensitivity of 0.724 µF/cm2/M, 2.32 mF/m2/M, and 0.95 mF/cm2/M, for fluoride, chloride, and bromide ions, respectively. Moreover, we have not observed any effect due to hydroxide ions on the areal capacitance of the InN NCs.

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References

  1. H. Lu, W.J. Schaff, L.F. Eastman, J. Appl. Phys. 96, 3577 (2004)

    Article  CAS  Google Scholar 

  2. Y.-S. Lu, C.-C. Huang, J.A. Yeh, C.-F. Chen, S. Gwo, Appl. Phys. Lett. 91, 202109 (2007)

    Article  Google Scholar 

  3. S. Mokkapati, C. Jagadish, Mater. Today 12, 22 (2009)

    Article  CAS  Google Scholar 

  4. A. Yamamoto, M.R. Islam, T.T. Kang, A. Hashimoto, Physica Status Solidi C 7, 1309 (2010)

    Article  CAS  Google Scholar 

  5. I.L. Medintz, M.H. Stewart, S.A. Trammell et al., Nat. Mater. 9, 676 (2010)

    Article  CAS  Google Scholar 

  6. S. De Franceschi, L. Kouwenhoven, C. Schönenberger, W. Wernsdorfer, Nat. Nanotechnol. 5, 703 (2010)

    Article  Google Scholar 

  7. M.E. Levinshtein, S.L. Rumyantsev, M.S. Shur, Properties of Advanced Semiconductor Materials: GaN (John Wiley & Sons, AIN, InN, BN, SiC, SiGe, 2001).

    Google Scholar 

  8. N. Chaniotakis, N. Sofikiti, Analytica Chimica Acta 615, 1 (2008)

    Article  CAS  Google Scholar 

  9. P.E.D.S. NuH Alvi, V.J.G. Rodriguez, P. Kumar, M. Willander, R. Nötzel, Appl. Phys. Express 6, 115201 (2013)

    Article  Google Scholar 

  10. E. Sakalauskas, P. Schley, J. Räthel et al., Physica Status Solidi (a) 207, 1066 (2010)

    Article  CAS  Google Scholar 

  11. P. Kumar, P.E.S. Rodriguez, V.J. Gomez, N.H. Alvi, E. Calleja, R. Nötzel, Appl. Phys. Express 6, 035501 (2013)

    Article  Google Scholar 

  12. A.G. Bhuiyan, A. Hashimoto, A. Yamamoto, J. Appl. Phy. 94, 2779 (2003)

    Article  CAS  Google Scholar 

  13. I.L. Medintz, H.T. Uyeda, E.R. Goldman, H. Mattoussi, Nat. Mater. 4, 435 (2005)

    Article  CAS  Google Scholar 

  14. P.E.S. Rodriguez, V.J. Gómez, P. Kumar, M. Willander, R. Nötzel, Appl. Phys. Express 6, 115201 (2013)

    Article  Google Scholar 

  15. N. Ul Hassan Alvi, V.J. Gómez, P.E. Soto Rodriguez et al., Sensors 13, 13917 (2013)

    Article  CAS  Google Scholar 

  16. L. Xie, P. Wang, H. Yin, G. Zhou, R. Noetzel, Appl. Phys. Express. (2020). https://doi.org/10.35848/1882-0786/ab67d3

    Article  Google Scholar 

  17. P.E.D. Soto Rodriguez, C.M. Mari, S. Sanguinetti, R. Ruffo, R. Nötzel, Appl. Phys. Express 9, 081004 (2016)

    Article  Google Scholar 

  18. P. Soto Rodriguez, P. Kumar, V. Gómez et al., Appl. Phys. Lett. 102, 173105 (2013)

    Article  Google Scholar 

  19. P.E. Soto Rodriguez, V.J. Gómez, P. Kumar, E. Calleja, R. Nötzel, Appl. Phys. Lett. 102, 131909 (2013)

    Article  Google Scholar 

  20. P. Kumar, M. Tuteja, M. Kesaria, U. Waghmare, S. Shivaprasad, Appl. Phys. Lett. 101, 131605 (2012)

    Article  Google Scholar 

  21. S. Gwo, C.-L. Wu, C.-H. Shen et al., Appl. Phys. Lett. 84, 3765 (2004)

    Article  CAS  Google Scholar 

  22. P. Sanchora, D.K. Pandey, D. Rana, A. Materny, D.K. Singh, J. Phys. Chem. A 123, 4948 (2019). https://doi.org/10.1021/acs.jpca.9b04116

    Article  CAS  Google Scholar 

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Acknowledgements

PK acknowledges SERB Project ECR/2018/001491” for financial support. RJ acknowledges CSIR-Senior Research Fellowship by CSIR India. The authors also extend their sincere appreciation to Researchers Supporting Project Number (RSP-2020/130) at King Saud University, Riyadh, Saudi Arabia, for financial support.

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Authors and Affiliations

  1. CSIR-Central Scientific Instruments Organisation, Chandigarh, 160030, India

    Rishabh Jain, Vinod Kumar Lokku & Pooja Devi

  2. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India

    Rishabh Jain, Vinod Kumar Lokku & Pooja Devi

  3. School of Materials Sciences, Indian Association for the Cultivation of Science, Kolkata, 700030, India

    Praveen Kumar

  4. Department of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia

    Jahangeer Ahmed

  5. King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451, Saudi Arabia

    M. A. Majeed Khan

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  1. Rishabh Jain
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  2. Vinod Kumar Lokku
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  4. M. A. Majeed Khan
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Correspondence to Praveen Kumar or Pooja Devi.

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Jain, R., Lokku, V.K., Ahmed, J. et al. Activated InN nanocolumns as sensitive halogen sensor. J Mater Sci: Mater Electron 32, 1759–1765 (2021). https://doi.org/10.1007/s10854-020-04943-x

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  • DOI: https://doi.org/10.1007/s10854-020-04943-x

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