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Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET)

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Abstract

Physics-based analytical model is proposed in this paper which analyzes the effect of temperature, channel length and silicon film radius on gate-induced drain leakages (GIDL) in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET). Formulation and analysis for electric field, Ez, surface potential and gate-induced drain leakage current, Igidl have been done with the help of appropriate boundary conditions utilized in solving two-dimensional Poisson’s equation. Also, the effect of variation in temperatures at T = 300 K and 500 K, silicon film channel length (L 30 nm and 40 nm) and radius of R = 9 nm and R = 10 nm have been studied. The simulated results seem to be in good compliance with the analytical results. To analyze the applicability of DM-JAM-TFET for RFIC applications, linearity of the aforesaid device has been deeply investigated by comparing DM-JAM-TFET with JAM-GAA and DM-JAM-GAA at channel length, L = 20 nm. The linearity metrics namely gm1, gm2, gm3, VIP2, VIP3, IMD3 and IIP3 have been significantly improved in DM-JAM-TFET making it intermodulation distortion resistant.

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Acknowledgements

Authors are grateful to the Director, Maharaja Agrasen Institute of Technology for providing necessary facilities to carry out this research work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, New Delhi, 110086, India

    Anubha Goel, Sonam Rewari & R. S. Gupta

  2. Department of Electronics and Communication, Banasthali University, Niwai, Banasthali, Rajasthan, 304022, India

    Seema Verma

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  1. Anubha Goel
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Correspondence to Anubha Goel.

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Appendix

Appendix

$$ A_{n} = \frac{{X_{n} - W_{n} e^{{( - \eta_{n} (L_{1} + L_{2} )}} - \frac{{Z_{n} }}{2}e^{{( - \eta_{n} (L_{1} + 2L_{2} )}} }}{{2\sin h\;(\eta_{n} L)}} $$
$$ B_{n} = \frac{{W_{n} e^{{( - \eta_{n} (L_{1} + L_{2} )}} - X_{n} - Y_{n} e^{{ - \eta_{n} L_{2} )}} }}{{2\sin h\;(\eta_{n} L)}} $$
$$ C_{n} = \frac{{Z_{n} - Y_{n} e^{{( - \eta_{n} (L_{1} + L_{2} )}} - X_{n} }}{{2\sin h\;(\eta_{n} L)}} $$
$$ D_{n} = \frac{{Y_{n} e^{{\eta_{n} (L_{1} + L_{2} )}} - Z_{n} + X_{n} }}{{2\sin h\;(\eta_{n} L)}} $$
$$ W_{n} = \frac{2}{{t^{2} J_{1}^{2} (\eta_{n} t_{\text{eff}} )}}\left[ \begin{aligned} & \left( {V_{\text{bi}} - V_{{{\text{gseff}}1}} + \frac{{t_{\text{si}} }}{2}} \right)\frac{{t_{\text{eff}} J_{1} (\eta_{n} t_{\text{eff}} )}}{\eta n} \\ & \quad + \frac{{\wp t\;_{\text{eff}} }}{{\eta_{n}^{2} }}\left\{ {t_{\text{eff}} J_{2} (\eta_{n} t_{\text{eff}} ) - \left( {t_{\text{eff}} - \frac{{t_{\text{eff}} }}{2}} \right)\left( {\frac{{J_{1} \left( {\eta_{n} t_{eff} } \right)}}{\eta nteff - 1} - J_{0} (\eta_{n} t_{\text{eff}} )} \right)} \right\} \\ \end{aligned} \right] $$
$$ X_{n} = \frac{2}{{t^{2} J_{1}^{2} (\eta_{n} t_{\text{eff}} )}}\left[ \begin{aligned} & \left( {V_{\text{bi}} + V_{\text{ds}} - V_{{{\text{gseff}}1}} + \frac{{t{\text{si}}}}{2}} \right)\frac{{t_{\text{eff}} J_{1} (\eta_{n} t_{\text{eff}} )}}{{\eta_{n} }} \\ & \quad + \;\frac{{\wp t_{\text{eff}} }}{{\eta_{n}^{2} }}\left\{ {t_{\text{eff}} J_{2} (\eta_{n} t_{\text{eff}} ) - \left( {t_{\text{eff}} - \frac{{t_{\text{eff}} }}{2}} \right)\left( {\frac{{J_{1} \left( {\eta_{n} t_{\text{eff}} } \right)}}{{\eta_{n} t_{\text{eff}} - 1}} - J_{0} (\eta_{n} t_{\text{eff}} )} \right)} \right\} \\ \end{aligned} \right] $$
$$ Y_{n} = \frac{2}{{t^{2} J_{1}^{2} (\eta_{n} t_{\text{eff}} )}}\left[ \begin{aligned} & \left( {V_{\text{bi}} - V_{{{\text{gseff}}2}} + \frac{{t_{\text{si}} }}{2}} \right)\frac{{t_{\text{eff}} J_{1} (\eta_{n} t_{\text{eff}} )}}{{\eta_{n} }} \\ & \quad + \;\frac{{\wp t_{\text{eff}} }}{{\eta_{n}^{2} }}\left\{ {t_{\text{eff}} J_{2} (\eta_{n} t_{\text{eff}} ) - \left( {t_{\text{eff}} - \frac{{t_{\text{eff}} }}{2}} \right)\left( {\frac{{J_{1} \left( {\eta_{n} t_{\text{eff}} } \right)}}{{\eta_{n} t_{\text{eff}} - 1}} - J_{0} (\eta_{n} t_{\text{eff}} )} \right)} \right\} \\ \end{aligned} \right] $$
$$ Z_{n} = \frac{2}{{t^{2} J_{1}^{2} (\eta_{n} t_{\text{eff}} )}}\left[ \begin{aligned} & \left( {V_{\text{bi}} + V_{\text{ds}} - V_{{{\text{gseff}}2}} + \frac{{t_{\text{si}} }}{2}} \right)\frac{{t_{\text{eff}} J_{1} (\eta_{n} t_{\text{eff}} )}}{\eta n} \\ & \quad + \;\frac{{{\wp }t_{\text{eff}} }}{{\eta_{n}^{2} }}\left\{ {t_{\text{eff}} J_{2} (\eta_{n} t_{\text{eff}} ) - \left( {t_{\text{eff}} - \frac{{t_{\text{eff}} }}{2}} \right)\left( {\frac{{J_{1} \left( {\eta_{n} t_{\text{eff}} } \right)}}{{\eta_{n} t_{\text{eff}} - 1}} - J_{0} (\eta_{n} t_{\text{eff}} )} \right)} \right\} \\ \end{aligned} \right] $$

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Goel, A., Rewari, S., Verma, S. et al. Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET). Appl. Phys. A 126, 346 (2020). https://doi.org/10.1007/s00339-020-03520-7

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