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Physical Limitations of Semiconductor Devices

  • Book
  • © 2008

Overview

Authors:
  1. V. A. Vashchenko

    1. National Semiconductor, Santa Clara, USA

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  2. V. F. Sinkevitch

    1. Pulsar R&D Manufacturing Company, Russia

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    You can also search for this author in PubMed   Google Scholar

  • Provides the description and translation of cross-disciplinary phenomena for reliability assurance including circuit design, ESD design and TCAD simulation
  • Applies directly to the area of ESD protection design
  • Explains complex physical descriptions so that they can be applied to the decision making process

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Table of contents (8 chapters)

  1. Front Matter

    Pages i-xiii
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  2. Failures of Semiconductor Device

    Pages 1-24

  3. Theoretical Basis of Current Instability in Transistor Structures

    Pages 25-51

  4. Thermal Instability Mechanism

    Pages 53-110

  5. Isothermal Current Instability in Silicon BJT and MOSFETs

    Pages 111-168

  6. Isothermal Instability in Compound Semiconductor Devices

    Pages 169-236

  7. Degradation Instabilities

    Pages 237-258

  8. Conductivity Modulation in ESD devices

    Pages 259-295

  9. Physical Approach to Reliability

    Pages 297-305

  10. Back Matter

    Pages 308-330
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Keywords

About this book

Since the beginning of semiconductor era in microelectronics the methodology of reliability assessment became a well established area. In most cases the reliability assessment involves statistical methods for safe operating area and long term re- ability parameters at the development of semiconductor processes, components and systems. At the same time in case of catastrophic failures at any development phase the major practical method is failure analysis (FA). However FA is mainly dealing with detection of consequences of some irreversible event that already happened. This book is focused on the most important and the less summarized reliability aspects. Among them: catastrophic failures, impact of local structural inhomo- neities, major principles of physical limitation of safe-operating area (SOA), physical mechanisms of the current instability, filamentation and conductivity modulation in particular device types and architectures. Specifically, the similar principles and regularities are discussed for elect- static discharge (ESD) protection devices, treating them as a particular case of pulsed power devices. Thus both the most intriguing applications and reliability problems in case of the discrete and the integrated components are covered in this book.

Authors and Affiliations

  • National Semiconductor, Santa Clara, USA

    V. A. Vashchenko

  • Pulsar R&D Manufacturing Company, Russia

    V. F. Sinkevitch

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