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Nanoscaled In2O3:Sn films as material for thermoelectric conversion: achievements and limitations

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Abstract

In this paper, thermoelectric properties of nanoscaled In2O3:Sn films are considered. The limitations that may appear during the usage of such materials in devices developed for the market of thermoelectric generators and refrigerators are also analysed. It is shown that nanoscaled In2O3:Sn is a promising material for thermoelectric applications. It is also established that insufficient thermal stability of nanostructured materials is the main limitation of these materials application in high-temperature thermoelectric converters. Optimization of grain boundary parameters and the usage of specific surrounding atmosphere can significantly improve the efficiency of thermoelectric conversion of nanostructured materials in the region of intermediate temperatures.

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Acknowledgements

This work was supported by the Moldovan Government under the grant 15.817.02.29F, by the Ministry of Science, ICT and Future Planning (MSIP) of Korea, and partly by the National Research Foundation grants funded by the Korean Government (Bank for Quantum Electronic Materials Nos. 2011-0028736 and 2013-K000315).

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Authors and Affiliations

  1. School of Material Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500712, Republic of Korea

    G KOROTCENKOV & B K CHO

  2. Department of Theoretical Physics, State University of Moldova, Chisinau, Republic of Moldova

    V BRINZARI

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  1. G KOROTCENKOV
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  2. V BRINZARI
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  3. B K CHO
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Correspondence to G KOROTCENKOV.

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KOROTCENKOV, G., BRINZARI, V. & CHO, B.K. Nanoscaled In2O3:Sn films as material for thermoelectric conversion: achievements and limitations. Bull Mater Sci 39, 1349–1354 (2016). https://doi.org/10.1007/s12034-016-1240-9

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  • DOI: https://doi.org/10.1007/s12034-016-1240-9

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