Abstract
Nanosheets of SnO produced by the chemical microwave assisted route were found to have attractive structural and electrical properties. The present work describes the thermoelectrical performance of this nanomaterial under annealing at different temperatures. The obtained results showed a systematic oxidation from SnO to SnO2 by annealing in the range 300–900 °C. The measured resistivity value was increased from 0.43 to 2.05 Ω m by increasing the annealing temperature from room temperature to 900 °C. The samples annealed below 400 °C, which are mostly SnO exhibit a high positive Seebeck coefficient implying a p-type conductivity, while those annealed above this temperature shows negative Seebeck coefficient implying a n-type. The observed high Seebeck values beside the other tunable properties suggesting that the obtained microwave synthesized SnO–SnO2 nanostructure might be a good candidate as a thermoelectric material for different applications.
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Acknowledgements
This project was funded by the National Plan for Science, Technology and Innovation (MAARIFAH)—King Abdulaziz City for Science and Technology—the Kingdom of Saudi Arabia—Award Number (11-NAN2045-03). The authors also, acknowledge with thanks Science and Technology Unit, King Abdulaziz University for technical support.
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Salah, N., AL-Shawafi, W.M., Alshahrie, A. et al. Microwave synthesis of 2D SnO nanosheets: effects of annealing temperatures on their thermoelectric properties. J Mater Sci: Mater Electron 28, 3598–3606 (2017). https://doi.org/10.1007/s10854-016-5961-8
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DOI: https://doi.org/10.1007/s10854-016-5961-8